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21 results

Conference Proceedings

1. Molecular Beam Epitaxy of Cubic Group III-Nitrides on Free-Standing 3C-SiC Substrates

As, D.J. ; Potthast, S. ; Schormann, J. ; Li, S.F. ; Lischka, K. ; Nagasawa, H. ; Abe, M.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1489-1492, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. Switch-Back Epitaxy' as a Novel Technique for Reducing Stacking Faults in 3C-SiC

Yagi, K. ; Kawahara, T. ; Hatta, N. ; Nagasawa, H.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.291-294, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

3. Raman Scattering Analyses of Stacking Faults in 3C-SiC Crystals

Mitani, T. ; Nakashima, S. ; Okumura, H. ; Nagasawa, H.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.343-346, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

4. INVITED: 3 C-SiC EPITAXIAL GROWTH ON LARGE-AREA Si SUBSTRATES: FABRICATION AND APPLICATIONS

Nagasawa, H. ; Yagi, K.

Pub. info.:	Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology. pp.1418-1432, 1998. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-1(2)

Conference Proceedings

5. Realization of Large Area 3C-SiC MOSFETs

Schoner, A. ; Bakowski, M. ; Ericsson, P. ; Stromberg, H. ; Nagasawa, H. ; Abe, M.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.801-804, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

6. Realization of Large Area Vertical 3C-SiC MOSFET Devices

Schoner, A. ; Bakowski, M. ; Ericsson, P. ; Stromberg, H. ; Nagasawa, H. ; Abe, M.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1273-1276, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

7. Silicon Carbide on Insulator (SiCOI) Structures by Direct Wafer Bonding Process

Chandra, S. ; Nagasawa, H.

Pub. info.:	Proceedings of the Eleventh International Workshop on the Physics of Semiconductor Devices : (December 11-15, 2001). VOL-1 pp.491-496, 2002. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	4746

Conference Proceedings

8. Four Current Examples of Characterization of Silicon Carbide

Bai, S. ; Ke, Yue ; Shishkin, Y. ; Shigiltchoff, O. ; Devaty, R.P. ; Choyke, W.J. ; Strauch, D. ; Stojetz, B. ; Dorner, B. ; Hobgood, D. ; Serrano, J. ; Cardona, M. ; Nagasawa, H. ; Kimoto, T. ; Porter, L.M.

Pub. info.:	Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A.. pp.151-162, 2003. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	742

Conference Proceedings

9. Midgap Defects in 4H-, 6H- and 3C-SiC Detected by Deep Level Optical Spectroscopy

Reshanov, S.A. ; Schneider, K. ; Helbig, R. ; Pensl, G. ; Nagasawa, H. ; Schoner, A.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.513-516, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

10.

Conference Proceedings

10. Negative-U-Centers in 4H- and 6H-SiC Detected by Spectral Light Excitation

Weidner, M. ; Pensl, G. ; Nagasawa, H. ; Schoner, A. ; Ohshima, T.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.485-488, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

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Author: Nagasawa, H.