1.

Conference Proceedings
Conference Proceedings
1. Temperature Dependent Stability of Stacking Fault in Highly Nitrogen-Doped 4H-SiC Crystals
C. Taniguchi ; A. Ichimura ; N. Ohtani ; M. Katsuno ; T. Fujimoto
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.109-112,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
2.

Conference Proceedings
Conference Proceedings
2. Characterization of Lattice Plane Bending and Stress Distribution in Physical Vapor Transport-Grown 4H-SiC Crystals
Y. Teramoto ; Y. Tabuchi ; D. Fukunaga ; K. Ohtomo ; N. Ohtani
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.53-56,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
3.

Conference Proceedings
Conference Proceedings
3. Development of Lapping and Polishing Technologies of 4H-SiC Wafers for Power Device Applications
H. Yashiro ; T. Fujimoto ; N. Ohtani ; T. Hoshino ; M. Katsuno
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.819-822,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
4.

Conference Proceedings
Conference Proceedings
4. The Formation of an Epitaxial-Graphene Cap Layer for Post-Implantation High Temperature Annealing of SiC and its In Situ Removal by Si-Vapor Etching
S. Ushio ; A. Adachi ; K. Matsuda ; N. Ohtani ; T. Kaneko
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.777-780,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
5.

Conference Proceedings
Conference Proceedings
5. Growth of Crack-Free 100mm-Diameter 4H-SiC Crystals with Low Micropipe Densities
M. Nakabayashi ; T. Fujimoto ; M. Katsuno ; N. Ohtani ; H. Tsuge
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.3-6,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
6.

Conference Proceedings
Conference Proceedings
6. Stacking Fault Formation in Highly Nitrogen-Doped 4H-SiC Substrates with Different Surface Preparation Conditions
M. Katsuno ; M. Nakabayashi ; T. Fujimoto ; N. Ohtani ; H. Yashiro
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.341-344,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
7.

Conference Proceedings
Conference Proceedings
7. Surface Phase Diagram of 4H-SiC {0001} Step-Terrace Structures during Si-Vapor Etching in a TaC Crucible
S. Ushio ; T. Karaki ; K. Hagiwara ; N. Ohtani ; T. Kaneko
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.573-576,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
8.

Conference Proceedings
Conference Proceedings
8. High Resolution X-Ray Diffraction (HRXRD) Studies of the Initial Stages of PVT-Growth of 4H-SiC Crystals
N. Ohtani ; M. Katsuno ; T. Fujimoto ; S. Sato ; H. Tsuge
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.489-492,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
9.

Conference Proceedings
Conference Proceedings
9. Spatially Graded Graphitization on 4H-SiC (0001) with Si-Sublimation Gradient for High Quality Epitaxial Graphene Growth
S. Ushio ; Y. Kutsuma ; A. Yoshii ; N. Tamai ; N. Ohtani
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.601-604,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
10.

Conference Proceedings
Conference Proceedings
10. Morphological Instability of 4H-SiC (0001) Basal Plane Surface during Si-Vapor Thermal Etching
S. Ushio ; K. Nakanishi ; N. Ohtani ; T. Kaneko
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.577-580,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720