1.

Conference Proceedings
Conference Proceedings
1. Estimation of Radiation-Induced Complex Concentration in CZ-Si by IR Absorption Spectroscopy
Y. Yonezawa ; N. Inoue ; Y. Takubo ; Y. Goto ; T. Sugiyama
Pub. info.: High Purity Silicon 10.  pp.343-350,  2008.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(6)
2.

Conference Proceedings
Conference Proceedings
2. Infrared Absorption Spectroscopy of Complexes in Low Carbon Concentration, Low Dose Irradiated CZ Silicon Crystal
N. Inoue ; S. Yamazaki ; Y. Goto ; T. Kushida ; T. Sugiyama
Pub. info.: High purity silicon 9.  pp.313-320,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(4)
3.

Conference Proceedings
Conference Proceedings
3. Overview of Materials Processing and Properties of Lanthanum-Based High-κ Dielectrics
D.J. Lichtenwalner ; J.S. Jur ; N. Inoue ; A.I. Kingon
Pub. info.: Physics and technology of high-k gate dielectrics 5.  pp.319-332,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(4)
4.

Conference Proceedings
Conference Proceedings
4. New Direct Synthesis Technology of Dimethyl Ether
T. Shikada ; Y. Miyoshi ; Y. Mogi ; N. Inoue ; Y. Ohno
Pub. info.: Science and technology in catalysis 2006 : proceedings of the fifth Tokyo Conference on Advanced Catalytic Science and Technology, Tokyo, July 23-28, 2006.  pp.137-140,  2007.  Tokyo.  Elsevier
Title of ser.: Studies in surface science and catalysis
Ser. no.: 172
5.

Conference Proceedings
Conference Proceedings
5. Standardization of Characterization of Bulk Microdefects and Denuded Zones in Annealed CZ Si
R. Takeda ; N. Inoue ; K. Moriya ; K. Kashima ; K. Nakashima ; M. Kato ; S. Kitagawa ; T. Ono ; H. Urushido ; N. Nango ; V. Akhmetov
Pub. info.: Silicon materials science and technology X.  pp.471-484,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 2(2)
6.

Conference Proceedings
Conference Proceedings
6. Standardization of Measurement of Nitrogen Concentration in CZ Silicon Crystals
N. Inoue ; A. Karen ; H. Yagi ; K. Masumoto ; M. Shinomiya ; K. Kashima ; K. Eifuku ; M. Koizumi ; T. Takahashi ; T. Takenawa ; K. Shingu
Pub. info.: Silicon materials science and technology X.  pp.453-460,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 2(2)
7.

Conference Proceedings
Conference Proceedings
7. Infrared Absorption Measurement of Carbon Concentration in Silicon Crystals
N. Inoue ; M. Nakatsu ; V. Akhmetov
Pub. info.: Silicon materials science and technology X.  pp.461-470,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 2(2)
8.

Conference Proceedings
Conference Proceedings
8. Pellicle versus influence of clean-room environments
N. Inoue ; H. Nakagawa ; M. Kondou ; M. Kitajima
Pub. info.: Photomask and X-ray mask technology II : 20-21 April 1995, Kawasaki City, Kanagawa, Japan.  pp.60-73,  1995.  Bellingham, WA.  Society of Photo-optical Instrumentation Engineers
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 2512
9.

Conference Proceedings
Conference Proceedings
9. Femtosecond Laser Synthesis of Polymorphic Diamond from Highly Oriented Pyrolytic Graphite
T. Sano ; K. Takahashi ; A. Hirose ; O. Sakata ; M. Okoshi ; N. Inoue ; K.F. Kobayashi
Pub. info.: PRICM 6 : selected, peer reviewed papers from The sixth Pacific Rim International Conference on Advanced Materials and Processing, November 5-9, 2007, ICC Jeju, Jeju Island, Korea.  561-565  pp.2349-2352,  2007.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 561-565
10.

Conference Proceedings
Conference Proceedings
10. High-Temperature Processing Effects on Lanthanum Silicate Gate Dielectric MIS Devices
D. J. Lichtenwalner ; J. Jur ; N. Inoue ; A. Kingon
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.227-238,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)