1.

Conference Proceedings
Conference Proceedings
1. The structure of DX centers and EL2
Morgan,T.N.
Pub. info.: Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991.  Pt.2  pp.859-864,  1992.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 83-87
2.

Conference Proceedings
Conference Proceedings
2. The Deep Donor(DX Center)in GaAs:Deterlnination of the Entropy Term in the Activation Energy
Theis,T.N. ; Morgan,T.N. ; Parker,B.D. ; Wright,S.L.
Pub. info.: Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988.  Part3  pp.1073-1078,  1989.  Aederlmannsdorf, Switzwelns.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 38-41
3.

Conference Proceedings
Conference Proceedings
3. The Vacancy-Interstitial Model of DX Centers
Morgan,T.N.
Pub. info.: Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988.  Part3  pp.1079-1084,  1989.  Aederlmannsdorf, Switzwelns.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 38-41