1.

Conference Proceedings
Conference Proceedings
1. 2.2 eV Luminescence in GaN
Hofmann, D. M. ; Kovalev, D. ; Steude, G. ; Volm, D. ; Meyer, B. K. ; Xavier, C. ; Monteiro, T. ; Pereira, E. ; Mokov, E. N. ; Amano, H. ; Akasaki, I.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.619-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
2.

Conference Proceedings
Conference Proceedings
2. Searching for the Influence of the Sapphire Nitridation Conditions on GaN Films Grown by Cyclic PLD
Sanguino, P. ; Niehus, M. ; Koynov, S. ; Melo, L. ; Schwarz, R. ; Soares, M.J. ; Boemare, C. ; Monteiro, T.
Pub. info.: GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A..  pp.61-66,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 743
3.

Conference Proceedings
Conference Proceedings
3. A Comparative Study of n-p GaN/SiC Heterojunction and p-n 6H-SiC Homojunction Diodes
Vacas, J. ; Lahreche, H. ; Monteiro, T. ; Gaspar, C. ; Pereira, E. ; Brylinski, C. ; Forte-Poisson, M. A. di
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1651-1654,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
4.

Conference Proceedings
Conference Proceedings
4. Photoluminescence between 3.36 eV and 3.41 eV from GaN epitaxial layers
Seitz, R. ; Gaspar, C. ; Monteiro, T. ; Pereira, E. ; Poisson, M. A. ; Beaumont, B.
Pub. info.: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.419-,  1999.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 572
5.

Conference Proceedings
Conference Proceedings
5. Time resolved photoluminescence of cubic Mg doped GaN
Seitz, R. ; Gaspar, C. ; Monteiro, T. ; Pereira, E. ; Schoettker, B. ; Frey, T. ; As, D. J. ; Schikora, D. ; Lischka, K.
Pub. info.: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.225-,  1999.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 572