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42 results

Conference Proceedings

1. Optically Detected Cyclotron Resonance for Defect Characterization

Godlewski,M. ; Chen,W.M. ; Monemar,B.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.3 pp.1353-1358, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

Conference Proceedings

2. Optically Detected Wagnetic Resotrance Studies of Non-Radiative Recombination Centres in 6H SiC

Son,N.T. ; Wagner,Mt. ; Sorman,E. ; Chen,W.M. ; Monemar,B. ; Janzen,E.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.599-602, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

3. Carrier and exciton dynamics in In0.15Ga0.85N/GaN multiple quantum well structures

Monemar,B. ; Bergman,J.P. ; Pozina,G. ; Dalfors,J. ; Sernelius,B.E. ; Holtz,P.O. ; Amano,H. ; Akasaki,I.

Pub. info.:	Ultrafast phenomena in semiconductors III : 27-29 January, 1999, San Jose, California. pp.168-178, 1999. Bellingham, Wash.. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3624

Conference Proceedings

4. The pseudo-donor electronic states of a metastable defect in silicon studied by uniaxial stress spectroscopy

Svensson,J.H. ; Janzen,E. ; Kordina,O. ; Monemar,B.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.1 pp.327-332, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

Conference Proceedings

5. ODMR and electron spin echo studies on the non-radiative triplet state of the(V-O)0 defect in silicon

Frens,A.M. ; Schmidt,J. ; Chen,W.M. ; Monemar,B.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.1 pp.357-362, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

Conference Proceedings

6. Room Temperature Photoluminescence Linewidth versus Material Quality of GaN

Monemar,B. ; Buyanova,I.A. ; Bergman,J.P. ; Amano,H. ; Akasaki,I.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part2 pp.1319-1322, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

7. Are There any Shallow Acceptors in GaN?

Monemar,B.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part2 pp.1327-1330, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

8. SF6/O2 and CF4/O2 Reactive-Ion-Etching-Induced Defects in Silicon Studied by Photoluminescence Spectroscopy:Role of Oxygen

Buyanova,I.A. ; Henry,A. ; Monemar,B. ; Lindstrom,J.L. ; Sheinkman,M.K. ; Oehrlein,G.S.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.1807-1812, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

Conference Proceedings

9. Optical Properties of Cubic Phase GaN Epilayers Grown by Molecular Beam Epitaxy on SiC/Silicon(100)Substrates

Godlewski,M. ; Ivanov,V.Yu. ; Bergman,J.P. ; Monemar,B. ; Barski,A. ; Langer,R.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part2 pp.1343-1346, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

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Conference Proceedings

10. Optical Studies of Excitons in Be-Doped GaAs/AlGaAs Symmetric Coupled Double Quantum Wells

Zhao,Q.X. ; Westgaard,T. ; Monemar,B. ; Fimland,B.O. ; Johannessen,K.

Pub. info.:	Shallow Impurities in Semiconductors : Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August, 1992. pp.333-338, 1993. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	117-118

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