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42 results

Conference Proceedings

1. Confinement Effects on the Electronic Structure of Shallow Acceptors in GaAs/AlGaAs Quantum Wells

Holtz,P.O. ; Zhao,Q.X. ; Monemar,B. ; Sundaram,M. ; Merz,J.L. ; Gossard,A.C.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.1 pp.657-662, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

Conference Proceedings

2. Non-Radiative Recombination via Deep Level Defects in Undoped GaAs/AlGaAs Quantum Wells

Bergman,J.P. ; Holtz,P.O. ; Monemar,B. ; Sundaram,M. ; Merz,J.L. ; Gossard,A.C.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.1 pp.629-634, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

Conference Proceedings

3. Observation of Rapid Direct Charge Transfer between Deep Defects in Silicon

Frens,A.M. ; Bennebroek,M.T. ; Zakrzewski,A. ; Schmidt,J. ; Chen,W.M. ; Janzen,E. ; Lindstrom,J.L. ; Monemar,B.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.3 pp.1371-1374, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

Conference Proceedings

4. ODMR and electron spin echo studies on the non-radiative triplet state of the(V-O)0 defect in silicon

Frens,A.M. ; Schmidt,J. ; Chen,W.M. ; Monemar,B.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.1 pp.357-362, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

Conference Proceedings

5. The pseudo-donor electronic states of a metastable defect in silicon studied by uniaxial stress spectroscopy

Svensson,J.H. ; Janzen,E. ; Kordina,O. ; Monemar,B.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.1 pp.327-332, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

Conference Proceedings

6. Magnetic resonance from a metastable sulfur-pair-related complex defect in silicon

Chen,W.M. ; Singh,M. ; Henry,A. ; Janzen,E. ; Monemar,B. ; Frens,A.M. ; Bennebroek,M.T. ; Schmidt,J. ; Reeson,K.J. ; Gwilliam,R.M.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.1 pp.251-256, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

Conference Proceedings

7. Infrared Absorption Studies of the Divacancy in Silicon New Properties of and Interpretation of the 0.34 eV Peak

Svensson,J. ; Svensson,B.G. ; Monemar,B.

Pub. info.:	Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988. Part1 pp.451-456, 1989. Aederlmannsdorf, Switzwelns. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	38-41

Conference Proceedings

8. Photoluminescenee dynamics in the near bandgap region of homoepitaxial GaN layers

Korona,K.P. ; Bergman,J.P. ; Monemar,B. ; Baranowski,J.M. ; Pakula,K. ; Grzegory,I. ; Porowski,S.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part2 pp.1125-1130, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

9. Optical Properties of Cubic Phase GaN Epilayers Grown by Molecular Beam Epitaxy on SiC/Silicon(100)Substrates

Godlewski,M. ; Ivanov,V.Yu. ; Bergman,J.P. ; Monemar,B. ; Barski,A. ; Langer,R.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part2 pp.1343-1346, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

10.

Conference Proceedings

10. Room Temperature Photoluminescence Linewidth versus Material Quality of GaN

Monemar,B. ; Buyanova,I.A. ; Bergman,J.P. ; Amano,H. ; Akasaki,I.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part2 pp.1319-1322, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

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