1.

Conference Proceedings
Conference Proceedings
1. Developments of nanoimprint technologies and applications (Invited Paper) [5931-12]
Ando, T. ; Kuwabara, K. ; Haginoya, C. ; Ogino, M. ; Ohashi, K. ; Miyauchi, A.
Pub. info.: Nanoengineering: fabrication, properties, optics, and devices II : 3-4 August, 2005, San Diego, California.  pp.59310B-,  2005.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5931
2.

Conference Proceedings
Conference Proceedings
2. Low-Temperature (750℃) Selective Epitaxial Growth of Heavily Boron Doped Silicon
Miyauchi, A. ; Suzuki, T. ; Uchino, T. ; Shiba, T.
Pub. info.: Proceedings of the Thirteenth International Symposium on Chemical Vapor Deposition.  pp.294-299,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-5
3.

Conference Proceedings
Conference Proceedings
3. Three-Dimensional Simulation of Gas Flow in a Disk-Type Silicon Epitaxial Reactor
Miyauchi, A. ; Inoue, Y. ; Suzuki, T. ; Sakamoto, M.
Pub. info.: Proceedings of the Symposium on Fundamental Gas-phase and Surface Chemistry of Vapor-phase Materials Synthesis.  pp.370-375,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-23
4.

Conference Proceedings
Conference Proceedings
4. REACTIVE DEPOSITION OF a-SILICON AND Si-BASED ALLOYS
Hanna, J. ; Oda, S. ; Shirai, H. ; Miyauchi, A. ; Tanabe, A. ; Fukuda, K. ; Ohtoshi, T. ; Tokuhiro, O. ; Nguyen, H. ; Shimizu, I.
Pub. info.: Materials issues in amorphous-semiconductor technology : symposium held April 15-18, 1986, Palo Alto, California, U.S.A..  pp.11-24,  1986.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 70
5.

Conference Proceedings
Conference Proceedings
5. Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor
Hasegawa, M. ; Miyauchi, A. ; Masahara, K. ; Ishida, Y. ; Takahashi, T. ; Ohno, T. ; Nishio, J. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.227-230,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
6.

Conference Proceedings
Conference Proceedings
6. Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor
Hasegawa, M. ; Miyauchi, A. ; Masahara, K. ; Ishida, Y. ; Takahashi, T. ; Ohno, T. ; Nishio, J. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.227-230,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393