1.

Conference Proceedings
Conference Proceedings
1. Stress Distribution in 2in SiC Wafer Measured by Photoelastic Method
Sasaki, M. ; Miyanagi, Y. ; Nakayama, K. ; Shiomi, H. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.403-406,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
2.

Conference Proceedings
Conference Proceedings
2. The Development of 2in 6H-SiC Wafer with High Thermal-Conductivity
Miyanagi, Y. ; Nakayama, K. ; Shiomi, H. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.51-54,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
3.

Conference Proceedings
Conference Proceedings
3. The Development of 4H-SiC {03-38} Wafers
Nakayama, K. ; Miyanagi, Y. ; Shiomi, H. ; Nishino, S. ; Kimoto, T. ; Matsunami, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.123-126,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
4.

Conference Proceedings
Conference Proceedings
4. The Effect of Epitaxial Growth on Warp of SiC Wafers
Nakayama, K. ; Miyanagi, Y. ; Maruyama, K. ; Okamoto, Y. ; Shiomi, H. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.235-238,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
5.

Conference Proceedings
Conference Proceedings
5. Improvement of SiC Wafer Warp by Annealing
Sasaki, M. ; Harada, S. ; Okamoto, Y. ; Kinoshita, H. ; Miyanagi, Y. ; Shiomi, H.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.829-832,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
6.

Conference Proceedings
Conference Proceedings
6. The Effect of Epitaxial Growth on Warp of SiC Wafers
Nakayama, K. ; Miyanagi, Y. ; Maruyama, K. ; Okamoto, Y. ; Shiomi, H. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.235-238,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
7.

Conference Proceedings
Conference Proceedings
7. The Development of 2in 6H-SiC Wafer with High Thermal-Conductivity
Miyanagi, Y. ; Nakayama, K. ; Shiomi, H. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.51-54,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
8.

Conference Proceedings
Conference Proceedings
8. Stress Distribution in 2in SiC Wafer Measured by Photoelastic Method
Sasaki, M. ; Miyanagi, Y. ; Nakayama, K. ; Shiomi, H. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.403-406,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
9.

Conference Proceedings
Conference Proceedings
9. The Development of 4H-SiC {03-38} Wafers
Nakayama, K. ; Miyanagi, Y. ; Shiomi, H. ; Nishino, S. ; Kimoto, T. ; Matsunami, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.123-126,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393