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13 results

Conference Proceedings

1. Mid-infrared photodetectors based on the lnAs/InGaSb type-Il superlattices

Lin,C.-H. ; Brown,G.J. ; Mitchel,W.C. ; Ahoujja,M. ; Szmulowicz,F.

Pub. info.:	Photodetectors : materials and devices III : 28-30 January 1998, San Jose, California. pp.22-29, 1998. Bellingham, Wash., USA. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3287

Conference Proceedings

2. New Developments in III-Nitride Material and Device Applications

Razeghi,M. ; Saxler,A. ; Kung,P. ; Walker,D. ; Zhang,X. ; Kim,K.S. ; Vydyanath,H.R. ; Solomon,J. ; Ahoujja,M. ; Mitchel,W.C.

Pub. info.:	Physics of - Semiconductor Devices -. Part 1 pp.277-284, 1998. New Delhi. Narosa Publishing House
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3316

Conference Proceedings

3. Growth and characterization of very long wavelength type-? infrared detectors

Mohseni,H. ; Tahraoui,A. ; Wojkowski,J.S. ; Razeghi,M. ; Mitchel,W.C. ; Saxler,A.W.

Pub. info.:	Photodetectors : materials and devices V : 26-28 January 2000, San Jose, California. pp.145-152, 2000. Bellingham, Wash., USA. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3948

Conference Proceedings

4. Growth and characterization of type-? nonequilibrium photovoltaic detectors for long wavelength infrared range

Mohseni,H. ; Wojkowski,J.S. ; Tahraoui,A. ; Razeghi,M. ; Brown,G.J. ; Mitchel,W.C.

Pub. info.:	Photodetectors : materials and devices V : 26-28 January 2000, San Jose, California. pp.153-160, 2000. Bellingham, Wash., USA. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3948

Conference Proceedings

5. Structural Characterization of SiC Crystals Grown by Physical Vapor Transport

Sanchez,E.K. ; Heydemann,V.D. ; Rohrer,G.S. ; Skowronski,M. ; Solomon,J. ; Capano,M.A. ; Mitchel,W.C.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.433-436, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

6. Thermal activation energies for the three inequivalent lattice sites for the BSi acceptor in 6H-SiC

Evwaraye,A.O. ; Smith,S.R. ; Mitchel,W.C. ; Hobgood,H.McD. ; Augustine,G. ; Balakrishna,V.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part2 pp.691-696, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

7. Phonon Speetrum of Band-to-Band Optical Transitions in 6H-SiC as Determined by Optical Admittance Spectroscopy

Smith,S.R. ; Evwaraye,A.O. ; Mitchel,W.C.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.569-572, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

8. Deep Levels in SiC:V by High Temperature Transport Measurements

Mitchel,W.C. ; Perrin,R. ; Goldstein,J. ; Roth,M. ; Ahoujja,M. ; Smith,S.R. ; Evwaraye,A.O. ; Solomon,J.S. ; Landis,G. ; Jenny,J. ; Hobgood,H.McD. ; Augustine,G. ; Balakrishna,V.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.545-548, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

9. Minority Carrier Lifetime Measurements in 6H-SiC Using the Photoconductive Decay Technique

Zhou,W. ; Khlebnikov,I. ; Sudarshan,T.S. ; Capano,M.A. ; Mitchel,W.C.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.525-528, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

10.

Conference Proceedings

10. GaN doped with sulphur

Saxier,A. ; Kung,P. ; Zhang,X. ; Walker,D. ; Soiomon,J. ; Ahoujja,M. ; Mitchel,W.C. ; Vydyanath,H.R. ; Razeghi,M.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part2 pp.1161-1166, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

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Author: Mitchel,W.C.