Plasma etching processes for sub-quarter micron devices : proceedings of the international symposium. pp.159-166, 1999. Pennington, NJ. Electrochemical Society
Silicon nitride and silicon dioxide thin insulating films VII : proceedings of the international symposium. pp.541-550, 2003. Pennington, N.J.. Electrochemical Society
Silicon nitride and silicon dioxide thin insulating films, proceedings of the fifth International Symposium. pp.270-278, 1999. Pennington, New Jersey. Electrochemical Society
The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000. pp.79-88, 2000. Pennington, N.J.. Electrochemical Society
Silicon Nitride and Silicon Dioxide Thin Insulating Films : proceedings of the sixth International Symposium. pp.52-59, 2001. Pennington, N.J.. Electrochemical Society
Srinivasan, P. ; Simoen, E. ; Pantisano, L. ; Claeys, C. ; Misra, D.
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Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium. pp.151-160, 2005. Pennington, NJ. Electrochemical Society
Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII). pp.274-284, 1995. Pennington, NJ. Electrochemical Society
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