1.

Conference Proceedings
Conference Proceedings
1. Hydrostatic pressure treatment techniques for investigation of semiconductor defect structure
Misiuk, A. ; Zaumseil, P.
Pub. info.: ALTECH 95 : analytical techniques for semiconductor materials and process characterization II : proceedings of the Satellite Symposium to ESSDERC 95, The Hague, The Netherlands.  pp.193-202,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-30
2.

Conference Proceedings
Conference Proceedings
2. Formation and evolution of the oxygen precipitates in CZ-Si upon high pressure- high temperature treatment
Antonova, I.V. ; Misiuk, A. ; Popov, V.P. ; Plotnikov, A.E. ; Surma, B.
Pub. info.: Proceedings of the Symposium on Crystalline Defects and Contamination, their Impact and Control in Device Manufacturing II.  pp.98-106,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-22
3.

Conference Proceedings
Conference Proceedings
3. Effect of Annealing Under Uniform Stress on Photoluminescence, Electrical, and Structural Properties of Silicon
Misiuk, A. ; Karwasz, G. P. ; Cazzanelli, M. ; Jung, W. ; Pavesi, L.
Pub. info.: Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.245-,  1997.  Pittsburg, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 469
4.

Conference Proceedings
Conference Proceedings
4. Application of High Temperature-Pressure Treatment for Investigation of Defect Creation in Basic Materials of Modern Microelectronics: Czochralski Silicon and Silicon Containing Films
Misiuk, A.
Pub. info.: Frontiers of high pressure research II: application of high pressure to low-dimensional novel electronic materials.  pp.275-290,  2001.  Dordrecht.  Kluwer Academic Publishers
Title of ser.: NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.: 48
5.

Conference Proceedings
Conference Proceedings
5. Effect of Annealing at Argon Pressures up to 1.2 Gpa on Hydrogen-Plasma Etched and Hydrogen Implanted Single-Crystalline Silicon
Misiuk, A. ; Misiuk, J.B.K. ; Barcz, A. ; Romano-Rodriguez, A. ; Antonova, I.V. ; Popov, V.P. ; Londos, C.A. ; Jun, J.
Pub. info.: Hydrogen materials science and chemistry of metal hydrides.  pp.441-446,  2002.  Dordrecht.  Kluwer Academic Publishers
Title of ser.: NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.: 71
6.

Conference Proceedings
Conference Proceedings
6. Effect of High Temperature-Pressure on Strain Relaxation in Thin Layers of Semiconductors Epitaxially Grown on GaAs and Si Substrates
Bak-Misiuk, J. ; Misiuk, A. ; Adamczewska, J. ; Calamiotou, M. ; Kozanecki, A. ; Kuristyn, D. ; Reginski, K. ; Kaniewski, J. ; Georgakilas, A.
Pub. info.: Atomistic aspects of epitaxial growth.  pp.467-476,  2002.  Dordrecht.  Kluwer Academic Publishers
Title of ser.: NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.: 65
7.

Conference Proceedings
Conference Proceedings
7. Effect of Annealing at High Hydrostatic Pressure of Silicon Implanted with Helium and Oxygen
Misiuk, A. ; Katcki, J. ; Ratajczak, J. ; Raineri, V. ; Bak-Misiuk, J. ; Gawlik, L. ; Bryja, L. ; Jun, J.
Pub. info.: Atomistic aspects of epitaxial growth.  pp.457-466,  2002.  Dordrecht.  Kluwer Academic Publishers
Title of ser.: NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.: 65
8.

Conference Proceedings
Conference Proceedings
8. Defects and their electronic properties in high-pressure-annealed SOI structures sliced by hydrogen
Popov, V.P. ; Gutakovskii, A.K. ; Safronov, L.N. ; Tyschenko, I.E. ; Zhuravlev, S.K. ; Talochkin, A.B. ; Antonova, A.I. ; Naumova, O.V. ; Obodikov, V.I. ; Misiuk, A. ; Bak-Misiuk, J. ; Domagala, J. ; Romano-Rodrigues, A. ; Bachrouri, A.
Pub. info.: Progress in SOI structures and devices operating at extreme conditions.  pp.269-288,  2002.  Dordrecht.  Kluwer Academic Publishers
Title of ser.: NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.: 58
9.

Conference Proceedings
Conference Proceedings
9. Electrical characteristics of SOI-like structures formed in nitrogen or oxygen implanted silicon treated under high pressure
Antonova, I.V. ; Misiuk, A. ; Londos, C.A.
Pub. info.: Silicon-on-insulator technology and devices XII : proceedings of the international symposium.  pp.325-330,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-03
10.

Conference Proceedings
Conference Proceedings
10. Effect of Stress on Accumulation of Hydrogen and Microstructure of Silicon co-Implanted with Hydrogen and Helium
Misiuk, A. ; Ratajczak, J. ; Barcz, A. ; Bak-Misiuk, J. ; Shalimov, A. ; Surma, B. ; Wnuk, A. ; Jagielski, J. ; Antonova, I. V.
Pub. info.: Hydrogen materials science and chemistry of carbon nanomaterials.  pp.579-592,  2004.  Dordrecht.  Kluwer Academic Publishers
Title of ser.: NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.: 172