HIGH DEFINITION MESA GROWTH BY SILICON MBE
- Author(s):
Hammerl, E. Wittmann, F. Messarosch, J. Eisele, I. Huber, V. Oppolzer, H. - Publication title:
- Silicon molecular beam epitaxy : symposium held April 29-May 3, 1991, Anaheim, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 220
- Pub. Year:
- 1991
- Page(from):
- 27
- Page(to):
- 34
- Pages:
- 8
- Pub. info.:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558991149 [155899114X]
- Language:
- English
- Call no.:
- M23500/220
- Type:
- Conference Proceedings
Similar Items:
Materials Research Society |
Trans Tech Publications |
North-Holland |
8
Conference Proceedings
Structural modifications of amorphized silicon surfaces following picosecond laser irradiation
North Holland |
Materials Research Society |
Trans Tech Publications |
MRS - Materials Research Society |
10
Conference Proceedings
THE INFLUENCE OF SURFACTANTS ON THE GROWTH OF GERMANIUM LAYERS ON SILICON SURFACES BY MBE
Materials Research Society |
Kluwer Academic Publishers |
SPIE-The International Society for Optical Engineering |
Materials Research Society |
12
Conference Proceedings
DEFECT GENERATION IN THE INITIAL STAGES OF EPITAXIAL GROWTH OF GaAs ON SILICON BY MBE.
Trans Tech Publications |