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15 results

Conference Proceedings

1. Profile Simulation Studies Of Oxide Deposition From Ozone/TEOS

Li, J. ; McVittie, J.P. ; Ferziger, J. ; Saraswat, K.C. ; Schmidt, M. ; Dobkin, D.

Pub. info.:	Proceedings of the third Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films. pp.570-580, 1994. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	1994-16

Conference Proceedings

2. MODELING OF PROFILE EVOLUTION IN DIAMOND CVD

IslamRaja, M.M. ; Cappelli, M.A. ; McVittie, J.P. ; Saraswat, K.C.

Pub. info.:	Proceedings of the Third International Symposium on Diamond Materials. pp.276-282, 1993. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	1993-17

Conference Proceedings

3. Process Dependence of Notching: Simulation of Topography De- pendent Charging with Sheath Oscillation Effect

Kinoshita, T. ; Hane, M. ; McVittie, J.P.

Pub. info.:	Proceedings of the eleventh International Symposium on Plasma Processing. pp.49-60, 1996. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	96-12

Conference Proceedings

4. Characterization of Damage Reduction Effect from Dielectric Protective Layer by a Real-Time Plasma Charging Probe

Ma, S. ; McVittie, J.P.

Pub. info.:	Proceedings of the eleventh International Symposium on Plasma Processing. pp.185-195, 1996. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	96-12

Conference Proceedings

5. CHARGING EFFECTS ON ION TRAJECTORIES IN PLASMA ETCHING

Murakawa, S. ; Fang, S. ; McVittie, J.P.

Pub. info.:	Proceedings of the Third International Symposium on Process Physics and Modeling in Semiconductor Technology. pp.483-490, 1993. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	1993-6

Conference Proceedings

6. PROFILE MODELING OF PHYSICAL VAPOR DEPOSITIN OF Ti AND Wsi

Eguchi, Y. ; IslamRaja, M.M. ; McVittie, J.P. ; Saraswat, K.C.

Pub. info.:	Proceedings of the Third International Symposium on Process Physics and Modeling in Semiconductor Technology. pp.301-309, 1993. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	1993-6

Conference Proceedings

7. *FACTORS AFFECTING CHARGING DAMAGE DURING PLASMA ETCHING

McVittie, J.P.

Pub. info.:	Proceedings of the Symposium on Contamination Control and Defect Reduction in Semiconductor Manufacturing III. pp.59-70, 1994. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	1994-9

Conference Proceedings

8. A NEW METHOD FOR ANALYZING THIN SIDEWALL INHIBITOR LAYERS

McVittie, J.P. ; Lin, T.A. ; Bariya, A.J.

Pub. info.:	Photon, beam, and plasma stimulated chemical processes at surfaces : symposium held December 1-4, 1986, Boston, Massachusetts, U.S.A.. pp.499-508, 1987. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	75

Conference Proceedings

9. Ion Heating in the Pre-Sheath of a Capacitively Coupled RF Discharge

Brinkmann, R.P. ; Hsiau, K. ; Zheng, J. ; McVittie, J.P.

Pub. info.:	Proceedings of the tenth symposium on plasma processing. pp.46-53, 1994. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	1994-20

10.

Conference Proceedings

10. Comparison of Automated Capacitor Testing Methods for Plasma Charging Induced Damage

Abdel-Ati, W.L.N. ; Ma, S. ; Yang, T.-C. ; McVittie, J.P. ; Saraswat, K.C.

Pub. info.:	ULSI science and technology, 1995 : proceedings of the Fifth International Symposium on Ultra Large Scale Integration Science and Technology. pp.410-417, 1995. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	95-5

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