1.

Conference Proceedings
Conference Proceedings
1. Bias Stress-Induced Threshold-Voltage Instability of SiC MOSFETs
Lelis, A.J. ; Habersat, D.B. ; Lopez, G. ; McGarrity, J.M. ; McLean, F.B. ; Goldsman, N.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1317-1320,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Using a First Principles Coulomb Scattering Mobility Model for 4H-SiC MOSFET Device Simulation
Potbhare, S. ; Pennington, G. ; Goldsman, N. ; Lelis, A.J. ; Habersat, D.B. ; McLean, F.B. ; McGarrity, J.M.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1321-1324,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. On Separating Oxide Charges and Interface Charges in 4H-SiC Metal-Oxide-Semiconductor Devices
Habersat, D.B. ; Lelis, A.J. ; Lopez, G. ; McGarrity, J.M. ; McLean, F.B.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1007-1010,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529