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Conference Proceedings

1. Photoluminescence Measurements of a Beryllium-Related Deep Center in Silicon

Campion,J.D. ; McGuigan,K.G. ; Henry,M.O. ; Nazare,M.H.

Pub. info.:	Shallow Impurities in Semiconductors : Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August, 1992. pp.177-182, 1993. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	117-118

Conference Proceedings

2. Photolumlnescence due to Zn-O Complexes in Silicon

Campion,J.D. ; Henry,M.O. ; McGuigan,K.G. ; Lightowlers,E.C.

Pub. info.:	Shallow Impurities in Semiconductors : Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August, 1992. pp.519-520, 1993. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	117-118

Conference Proceedings

3. Oxygen Complexing with Group II Impurities in Silicon

Daly,S.E. ; McGlynn,E. ; Henry,M.O. ; Campion,J.D. ; McGuigan,K.G. ; DoCarmo,M.C. ; Nazare,M.H.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.1303-1308, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

Conference Proceedings

4. Novel luminescent centres in cadmium doped silicon

Frehill,C.A. ; Henry,M.O. ; McGlynn,E. ; Daly,S.E. ; Deicher,M. ; Magerle,R. ; McGuigan,K.G. ; Safanov,A.N. ; Lightowlers,E.C.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part1 pp.521-526, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263