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15 results

Conference Proceedings

1. ELECTRICAL PROPERTIES OF OXIDE-NITRIDE-OXIDE, ONO, HETEROSTRUCTURES FABRICATED BY LOW TEMPERATURE REMOTE PECVD

Ma, Y. ; Yasuda, T. ; Chen, Y.L. ; Lucovsky, G. ; Maher, D.M.

Pub. info.:	Amorphous insulating thin films : symposium held December 1-4, 1992, Boston, Massachusetts, U.S.A.. pp.147-152, 1993. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	284

Conference Proceedings

2. A STUDY OF EXTENDED DEFECTS IN SILICON CRYSTALS AFTER EXPOSURE TO A HYDROGEN PLASMA

Chen, Y.L. ; Maher, D.M.

Pub. info.:	Evolution of surface and thin film microstructure : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.. pp.561-564, 1993. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	280

Conference Proceedings

3. ELECTRON MICROSCOPY STUDIES OF UNDOPED AND PHOSPHORUS DOPED Si:H AND Si,C:H FILMS

Chen, Y.L. ; Bentley, J. ; Wang, C. ; Lucovsky, G. ; Maher, D.M.

Pub. info.:	Amorphous silicon technology, 1993 : Symposium held April 13-16, San Francisco, California, U.S.A.. pp.711-716, 1993. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	297

Conference Proceedings

4. In-Sity Boron-Doped Si1-xGex Gate Technology for Submicron NMOS- and PMOS-FETs

OEztuerk, M.C. ; Batchelor, D. ; Venables, D. ; Maher, D.M.

Pub. info.:	ULSI science and technology, 1997 : proceedings of the Sixth International Symposium on Ultralarge Scale Integration Science and Technology. pp.549-560, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-3

Conference Proceedings

5. REDUCTION OF SURFACE ROUGHENING AND SUBSURFACE DEFECTS IN H-PLASMA CLEANING OF Si (100)

Schneider, T.P. ; Montgomery, J.S. ; Ying, H. ; Barnak, J.P. ; Chen, Y.L. ; Maher, D.M. ; Nemanich, R.J.

Pub. info.:	Proceedings of the Third International Symposium on Cleaning Technology in Semiconductor Device Manufacturing. pp.329-338, 1994. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	1994-7

Conference Proceedings

6. DISLOCATION NUCLEATION IN GeSi/Si (100) STRAINED EPILAYERS

Eagleshham, D.J. ; Evam, E.P. ; Maher, D.M. ; Humphreys, C.J. ; Bean, J.C.

Pub. info.:	Characterization of the structure and chemistry of defects in materials : symposium held November 28-December 3, 1988, Boston, Massachusetts, U.S.A.. pp.397-402, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	138

Conference Proceedings

7. *KINETICS, MICROSTRUCTURE AND MECHANISMS OF ION BEAM-INDUCED EPITAXIAL CRYSTALLIZATION OF SEMICONDUCTORS

Elliman, R.G. ; Williams, J.S. ; Maher, D.M. ; Brown, W.L.

Pub. info.:	Beam-solid interactions and phase transformations : symposium held December 2-4, 1985, Boston, Massachusetts, USA. pp.319-328, 1985. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	51

Conference Proceedings

8. *TRANSPORT AND MICROSTRUCTURE OF MICROCRYSTALLINE SILICON ALLOYS

Lucovsky, G. ; Wang, C. ; Williams, M.J. ; Chen, Y.L. ; Maher, D.M.

Pub. info.:	Microcrystalline semiconductors : materials science & devices : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.. pp.443-454, 1993. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	283

Conference Proceedings

9. ELECTRICAL PROPERTIES OF BORON-DOPED μc-Si:H PREPARED BY REACTIVE MAGNETRON SPUTTERING FROM c-Si TARGETS

Turner, W.A. ; Williams, M.J. ; Chen, Y.L. ; Maher, D.M. ; Lucovsky, G.

Pub. info.:	Microcrystalline semiconductors : materials science & devices : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.. pp.567-572, 1993. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	283

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Conference Proceedings

10. EPITAXIAL CRYSTALLIZATION OF AMORPHOUS SILICON LAYERS UNDER ION IRRADIATION: ORIENTATION DEPENDENCE

Maher, D.M. ; Elliman, R. G. ; Linnros, J. ; Williams, J. S. ; Knoell, R. V. ; Brown, W. L.

Pub. info.:	Materials modification and growth using Ion beams : symposium held April 21-23, 1987, Anaheim, California, U.S.A.. pp.87-92, 1987. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	93

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Author: Maher, D.M.