1.

Conference Proceedings
Conference Proceedings
1. A New Technique to Profile Hot-Carrier Induced Interface State Generation in nMOSFETs using Charge Pumping
Mahapatra,S. ; Parikh,C.D. ; Vasi,J.
Pub. info.: Physics of - Semiconductor Devices -.  Part 2  pp.1030-1033,  1998.  New Delhi.  Narosa Publishing House
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3316
2.

Conference Proceedings
Conference Proceedings
2. ULSI MOS Transistors with Jet Vapour Deposited(JVD)Silicon Nitride for the Gate Insulator
Mahapatra,S. ; Manjularani,K.N. ; Rao,V.Ramgopal ; Vasi,J.
Pub. info.: Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices (December 14-18, 1999).  Part2  pp.803-810,  2000.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3975