1.

Conference Proceedings
Conference Proceedings
1. FEDRAM: A Capacitor-Jess Ferroelectric DRAM Cell
Ma, T.P. ; Han, J.-P.
Pub. info.: ULSI process integration : proceedings of the first international symposium.  pp.89-92,  1999.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-18
2.

Conference Proceedings
Conference Proceedings
2. Electrical Characterization of Gallium Nitride MIS Capacitors with An Oxide/Nitride/Oxide Gate Dielectric Synthesized by the Jet Vapor Deposition Technique
Gaffey, B. ; Chong, G. ; Guido, U. ; Wang, X.W. ; Ma, T.P.
Pub. info.: Proceedings of the State-of-the-Art Program on Compound Semiconductors (SOTAPOCs XXX).  pp.174-180,  1999.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-4
3.

Conference Proceedings
Conference Proceedings
3. Device Fabrication and Evaluation of Alternative High-K Dielectrics and Gate Electrodes Using a Non-Self Aligned Gate process
Kim, I. ; Han, S.K. ; Kiether, W. ; Lee, S.J. ; Lee, C.H. ; Luan, H.F. ; Luo, Z. ; Rying, E. ; Wicaksana, Z.Wang D. ; Zhu, W. ; Hauser, J. ; Kiingon, A. ; Kwang, D.L. ; Ma, T.P. ; Maria, J.P. ; Misra, V. ; Osburn, C.M.
Pub. info.: Rapid thermal and other short-time processing technologies II : proceedings of the international symposium.  pp.211-220,  2001.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-9
4.

Conference Proceedings
Conference Proceedings
4. Advanced Gate Dielectrics Synthesized by JVD
Ma, T.P.
Pub. info.: Advances in rapid thermal processing : proceedings of the symposium.  pp.57-68,  1999.  Pennington, N. J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-10
5.

Conference Proceedings
Conference Proceedings
5. High Quality Gate Oxide in p-Type 6H-SiC MOS Structures Made by the Jet Vapor Deposition Process
Wang, X.W. ; Ma, T.P. ; Cui, G.J. ; Tamagawa, T. ; Schmitt, J.J. ; Halpern, B.
Pub. info.: Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films.  pp.332-337,  1997.  Pennington, New Jersey.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-10
6.

Conference Proceedings
Conference Proceedings
6. Gate-Quality Silicon Nitride Films On Silicon By Jet Vapor Deposition
Wang, X. ; Ma, T.P. ; Cui, G.-J. ; Tamagawa, T. ; Golz, J.W. ; Schmitt, J.J. ; Halpern, B.L.
Pub. info.: Proceedings of the third Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films.  pp.603-611,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-16
7.

Conference Proceedings
Conference Proceedings
7. Integration Issues with High k Gate Stacks*
Osburn, C.M. ; Han, S.K. ; Kim, I. ; Campbell, S.A. ; Garfunkel, E. ; Gustafson, T. ; Hauser, J. ; King, T.-J. ; Liu, Q. ; Ranade, P. ; Kingon, A. ; Kwong, D.-L. ; Lee, S.J. ; Lee, C.H. ; Lee, J. ; Onishi, K. ; Kang, C.S. ; Choi, R. ; Cho, H. ; Nich, R. ; Lucovsky, G. ; Hong, J.G. ; Ma, T.P. ; Zhu, W. ; Luo, Z. ; Maria, J.P. ; Wicaksana, D. ; Misra, V. ; Lee, J.J. ; Suh, Y.S. ; Parksons, G. ; Niu, D. ; Stemmer, S.
Pub. info.: ULSI Process Integration : proceedings of the International Symposium.  pp.375-390,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-6
8.

Conference Proceedings
Conference Proceedings
8. Improving 4H-SiC/SiO2 Interface Properties by Depositing Ultra-Thin Si Nitride Layer Prior to Formation of SiO2 and Annealing
Wang, X.W. ; Bu, H.M. ; Laube, B.L. ; Caragianis-Broadbridge, C. ; Ma, T.P.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.993-996,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
9.

Conference Proceedings
Conference Proceedings
9. Influence of oxygen implant dose on front and back channel characteristics of MOSFET's fabricated in single and double-implant SIMOX substrates
Yoshino, A. ; Ma, T.P. ; Okumura, K.
Pub. info.: Proceedings of the Sixth International Symposium on Silicon-on-Insulator Technology and Devices.  pp.312-317,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-11
10.

Conference Proceedings
Conference Proceedings
10. Improving 4H-SiC/SiO2 Interface Properties by Depositing Ultra-Thin Si Nitride Layer Prior to Formation of SiO2 and Annealing
Wang, X.W. ; Bu, H.M. ; Laube, B.L. ; Caragianis-Broadbridge, C. ; Ma, T.P.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.993-996,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393