1.

Conference Proceedings
Conference Proceedings
1. Bipolar Degradation of High Voltage 4H-SiC p-i-n Diodes in Pulse Regime
M.E. Levinshtein ; P.A. Ivanov ; J. Palmour ; A. Agarwal ; M.K. Das
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.539-542,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
2.

Conference Proceedings
Conference Proceedings
2. Critical Technical Issues in High Voltage SiC Power Devices
A.K. Agarwal ; A.A. Burk ; R. Callanan ; C. Capell ; M.K. Das
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.895-900,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
3.

Conference Proceedings
Conference Proceedings
3. Self-Heating of 4H-SiC PiN Diodes at High Current Densities
M.E. Levinshtein ; T.T. Mnatsakanov ; P.A. Ivanov ; J.W. Palmour ; M.K. Das
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.1007-1010,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
4.

Conference Proceedings
Conference Proceedings
4. A 13 kV 4H-SiC n-Channel IGBT with Low Rdiff,on and Fast Switching
M.K. Das ; Q.J. Zhang ; R. Callanan ; C. Capell ; J. Clayton
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.1183-1186,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
5.

Conference Proceedings
Conference Proceedings
5. Performance of 60 A, 1200 V 4H-SiC DMOSFETs
B.A. Hull ; C. Jonas ; S.H. Ryu ; M.K. Das ; M.J. O'Loughlin
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.749-752,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
6.

Conference Proceedings
Conference Proceedings
6. SiC MOSFET Reliability Update
M.K. Das ; S.K. Haney ; J. Richmond ; A. Olmedo ; Q.J. Zhang
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.1073-1076,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
7.

Conference Proceedings
Conference Proceedings
7. 10 kV SiC Power MOSFETs and JBS Diodes: Enabling Revolutionary Module and Power Conversion Technologies
M.K. Das ; D. Grider ; S. Leslie ; R. Raju ; M. Schutten
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.1225-1228,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720