1.

Conference Proceedings
Conference Proceedings
1. 4H-SiC Digital Logic Circuitry Based on P+ Implanted Isolation Walls MESFET Technology
M. Alexandru ; V. Banu ; P. Godignon ; M. Vellvehi ; J. Millán
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.1048-1051,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
2.

Conference Proceedings
Conference Proceedings
2. Design of Digital Electronics for High Temperature Using Basic Logic Gates Made of 4H-SiC MESFETs
M. Alexandru ; V. Banu ; M. Vellvehi ; P. Godignon ; J. Millan
Pub. info.: HeteroSiC & WASMPE 2011 : selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France.  pp.104-108,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 711
3.

Conference Proceedings
Conference Proceedings
3. 300°C SiC Blocking Diodes for Solar Array Strings
E. Maset ; E. Sanchis-Kilders ; P. Brosselard ; X. Jordá ; M. Vellvehi
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.925-928,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
4.

Conference Proceedings
Conference Proceedings
4. Reliability Aspects of High Voltage 4H-SiC JBS Diodes
P. Brosselard ; N. Camara ; X. Jordá ; M. Vellvehi ; E. Bano
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.935-938,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
5.

Conference Proceedings
Conference Proceedings
5. New Diode Designs Compatible with Vertical 4H-SiC JFET Fabrication Process
P. Brosselard ; D. Tournier ; M. Vellvehi ; J. Montserrat ; P. Godignon ; J. Millan
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.1003-1006,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
6.

Conference Proceedings
Conference Proceedings
6. High Temperature Electrical Characterization of 4H-SiC MESFET Basic Logic Gates
M. Alexandru ; V. Banu ; M. Florentin ; X. Jordá ; M. Vellvehi
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.1130-1134,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
7.

Conference Proceedings
Conference Proceedings
7. Fabrication and Testing of 4H-SiC MESFETs for Analog Functions Circuits
A. Devie ; D. Tournier ; P. Godignon ; M. Vellvehi ; J. Montserrat
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.1159-1162,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648