1.

Conference Proceedings
Conference Proceedings
1. Exact Characterization of Threshold Voltage Instability in 4H-SiC MOSFETs by Non-Relaxation Method
M. Sometani ; D. Okamoto ; S. Harada ; H. Ishimori ; S. Takasu
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.685-688,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
2.

Conference Proceedings
Conference Proceedings
2. Deep-Level Transient Spectroscopy Characterization of Interface States in SiO2/4H-SiC Structures Close to the Conduction Band Edge
T. Hatakeyama ; M. Sometani ; K. Fukuda ; H. Okumura ; T. Kimoto
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.424-427,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
3.

Conference Proceedings
Conference Proceedings
3. Conduction Mechanism of Leakage Current in Thermal Oxide on 4H-SiC
M. Sometani ; D. Okamoto ; S. Harada ; H. Ishimori ; S. Takasu
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.579-582,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
4.

Conference Proceedings
Conference Proceedings
4. Dynamic Characterization of the Threshold Voltage Instability under the Pulsed Gate Bias Stress in 4H-SiC MOSFET
M. Okamoto ; M. Sometani ; S. Harada ; H. Yano ; H. Okumura
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.549-552,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
5.

Conference Proceedings
Conference Proceedings
5. Ultrahigh-Temperature Oxidation of 4H-SiC(0001) and an Impact of Cooling Process on SiO2/SiC Interface Properties
T. Hosoi ; D. Nagai ; M. Sometani ; T. Shimura ; M. Takei ; H. Watanabe
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.323-326,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897