1.

Conference Proceedings
Conference Proceedings
1. Characterization of MOS Capacitors Fabricated on n-type 4H-SiC Implanted with Nitrogen at High Dose
A. Poggi ; F. Moscatelli ; Y. Hijikata ; S. Solmi ; M. Sanmartin ; F. Tamarri ; R. Nipoti
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.639-642,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
2.

Conference Proceedings
Conference Proceedings
2. Improvement of Electron Channel Mobility in 4H SiC MOSFET by Using Nitrogen Implantation
F. Moscatelli ; R. Nipoti ; S. Solmi ; S. Cristiani ; M. Sanmartin
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.699-702,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
3.

Conference Proceedings
Conference Proceedings
3. Improving Doping Efficiency of P+ Implanted Ions in 4H-SiC
R. Nipoti ; A. Nath ; S. Cristiani ; M. Sanmartin ; M.V. Rao
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.393-396,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680