1.

Conference Proceedings
Conference Proceedings
1. Modelling of Effective Minority Carrier Lifetime in 4H-SiC n-Type Epilayers
D. Kaminzky ; B. Kallinger ; P. Berwian ; M. Rommel ; J. Friedrich
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.341-344,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
2.

Conference Proceedings
Conference Proceedings
2. HCl Assisted Growth of Thick 4H-SiC Epilayers for Bipolar Devices
B. Kallinger ; C. Ehlers ; P. Berwian ; M. Rommel ; J. Friedrich
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.210-213,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
3.

Conference Proceedings
Conference Proceedings
3. Detailed Photocurrent Analysis of Iron Contaminated Boron Doped Silicon by Comparison of Simulation and Measurement
M. Rommel ; A. Bauer ; H. Ryssel
Pub. info.: Analytical Techniques for Semiconductor Materials and Process Characterization 5 (ALTECH 2007) (plus Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes).  pp.117-126,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 10(1)
4.

Conference Proceedings
Conference Proceedings
4. Comparison of Carrier Lifetime Measurements and Mapping in 4H SiC Using Time Resolved Photoluminscence and µ-PCD
B. Kallinger ; M. Rommel ; L. Lilja ; J. Ul Hassan ; I.D. Booker
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.301-304,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
5.

Conference Proceedings
Conference Proceedings
5. Influence of Epilayer Thickness and Structural Defects on the Minority Carrier Lifetime in 4H-SiC
B. Kallinger ; P. Berwian ; J. Friedrich ; M. Rommel ; M. Azizi
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.633-636,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
6.

Conference Proceedings
Conference Proceedings
6. Point Contact Current Voltage Measurements of 4H-SiC Samples with Different Doping Profiles
M. Kocher ; M. Niebauer ; M. Rommel ; V. Haeublein ; A.J. Bauer
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.287-290,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
7.

Conference Proceedings
Conference Proceedings
7. 4.5 kV SiC Junction Barrier Schottky Diodes with Low Leakage Current and High Forward Current Density
J. Schoeck ; J. Buettner ; M. Rommel ; T. Erlbacher ; A.J. Bauer
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.427-430,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897