1.

Conference Proceedings
Conference Proceedings
1. Enhanced Channel Mobility in 4H-SiC MISFETs by Utilizing Deposited SiN/SiO2 Stack Gate Structures
M. Noborio ; J. Suda ; T. Kimoto
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.679-682,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
2.

Conference Proceedings
Conference Proceedings
2. Electrical Characterization of MOS Structures with Deposited Oxides Annealed in N2O or NO
M. Grieb ; M. Noborio ; D. Peters ; A.J. Bauer ; P. Friedrichs
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.521-524,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
3.

Conference Proceedings
Conference Proceedings
3. Lateral 4H-SiC MOSFETs with Low On-Resistance by Using Two-Zone Double RESURF Structure
M. Noborio ; J. Suda ; T. Kimoto
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.815-818,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
4.

Conference Proceedings
Conference Proceedings
4. High Channel Mobility in P-Channel MOSFETs Fabricated on 4H-SiC (0001) and Non-Basal Faces
M. Noborio ; J. Suda ; T. Kimoto
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.789-792,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
5.

Conference Proceedings
Conference Proceedings
5. 1.5 kV Lateral Double RESURF MOSFETs on 4H-SiC (000-1)C Face
M. Noborio ; J. Suda ; T. Kimoto
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.757-760,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
6.

Conference Proceedings
Conference Proceedings
6. Improved On-Current of 4H-SiC MOSFETs with a Three-Dimensional Gate Structure
Y. Nanen ; H. Yoshioka ; M. Noborio ; J. Suda ; T. Kimoto
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.753-756,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
7.

Conference Proceedings
Conference Proceedings
7. Defect Control in Growth and Processing of 4H-SiC for Power Device Applications
T. Kimoto ; G. Feng ; T. Hiyoshi ; K. Kawahara ; M. Noborio
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.645-650,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
8.

Conference Proceedings
Conference Proceedings
8. Comparison of the Threshold-Voltage Stability of SiC MOSFETs with Thermally Grown and Deposited Gate Oxides
M. Grieb ; M. Noborio ; D. Peters ; A.J. Bauer ; P. Friedrichs
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.681-684,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
9.

Conference Proceedings
Conference Proceedings
9. Electrical Characterization and Reliability of Nitrided-Gate Insulators for N- and P-Type 4H-SiC MIS Devices
M. Noborio ; M. Grieb ; A.J. Bauer ; D. Peters ; P. Friedrichs
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.825-828,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648