1.

Conference Proceedings
Conference Proceedings
1. Ge Enrichment Technique on SiGe/SOI Mesa Islands: a Localized GeOI Structures Fabrication Method
B. Vincent ; J.-F. Damlencourt ; Y. Morand ; D. Rouchon ; M. Mermoux
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 4 : new materials, processes and equipment.  pp.235-242,  2008.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 13(1)
2.

Conference Proceedings
Conference Proceedings
2. Coupling between the Raman Spectroscopy and Photoemission Microscopy Techniques: Investigation of Defects in Biased 4H-SiC pin Diodes
A. Thuaire ; M. Mermoux ; E. Bano ; A. Crisci ; F. Baillet ; K. Zekentes
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.909-912,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
3.

Conference Proceedings
Conference Proceedings
3. UV and Visible Raman Spectroscopy Applied to sSi/Si1-xGex and sSOI Stacks
D. Rouchon ; J. Hartmann ; A. Crisci ; M. Mermoux
Pub. info.: SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices.  pp.181-188,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(10)
4.

Conference Proceedings
Conference Proceedings
4. Strain in Epitaxial Si/SiGe Graded Buffer Structures Grown on Si (100), Si (110) and Si(111): a Raman Spectroscopy Study
D. Rouchon ; V. Destefanis ; J. Hartmann ; A. Crisci ; M. Mermoux
Pub. info.: SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices.  pp.203-214,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(10)
5.

Conference Proceedings
Conference Proceedings
5. Structural Properties of Tensile-Strained Si Layers Grown on Si₁₋xGex Virtual Substrates (x = 0.2, 0.3, 0.4 and 0.5)
J. Hartmann ; D. Rouchon ; J. Barnes ; M. Mermoux ; T. Billon
Pub. info.: Silicon-on-insulator technology and devices 13.  pp.251-256,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(4)