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17 results

Conference Proceedings

1. Correlation between Schottky Contact Characteristics and Regions with a Low Barrier Height Revealed by the Electrochemical Deposition on 4H-SiC

M. Kato ; H. Ono ; M. Ichimura

Pub. info.:	Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. pp.669-672, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	645-648

Conference Proceedings

2. Correlation between Microwave Reflectivity and Excess Carrier Concentrations in 4H-SiC

M. Kato ; Y. Mori ; M. Ichimura

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.293-296, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780

Conference Proceedings

3. Identification of Structures of the Deep Levels in 4H-SiC

H. Nakane ; M. Kato ; M. Ichimura ; T. Ohshima

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.277-280, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780

Conference Proceedings

4. Solar-to-Hydrogen Conversion Efficiency of Water Photolysis with Epitaxially Grown p-Type SiC

T. Yasuda ; M. Kato ; M. Ichimura ; T. Hatayama

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.859-862, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742

Conference Proceedings

5. Characterization of the Excess Carrier Lifetime of As-Grown and Electron Irradiated Epitaxial p-Type 4H-SiC Layers by the Microwave Photoconductivity Decay Method

V. Matsushita ; M. Kato ; M. Ichimura ; T. Hatayama ; T. Ohshima

Pub. info.:	Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. pp.207-210, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	645-648

Conference Proceedings

6. Estimation of Surface Recombination Velocities for n-Type 4H-SiC Surfaces Treated by Various Processes

Y. Mori ; M. Kato ; M. Ichimura

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.432-435, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780

Conference Proceedings

7. Impact of Carrier Lifetime on Efficiency of Photolytic Hydrogen Generation by p-Type SiC

K. Miyake ; T. Yasuda ; M. Kato ; M. Ichimura ; T. Hatayama

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.503-506, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780

Conference Proceedings

8. Highly Sensitive Room Temperature Hydrogen Sensors Based on Photochemically Deposited SnO₂

M. Ichimura ; D. Ao

Pub. info.:	Energy, Environment and Functional Materials : Selected, peer reviewed papers from the 12th IUMRS International Conference on Advanced Materials (IUMRS-ICAM 2013), September 22-28, 2013, Qingdao, China. pp.378-382, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	787

Conference Proceedings

9. Excess Carrier Lifetimes in a Bulk p-Type SiC Wafer Measured by the Microwave Photoconductivity Decay Method

M. Kawai ; T. Mori ; M. Kato ; M. Ichimura ; S. Sumie ; H. Hashizume

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. 556-557 pp.359-362, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

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Conference Proceedings

10. Deep Levels in P-Type 4H-SiC Induced by Low-Energy Electron Irradiation

K. Yoshihara ; M. Kato ; M. Ichimura ; T. Hatayama ; T. Ohshima

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.373-376, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742

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Author: M. Ichimura