1.

Conference Proceedings
Conference Proceedings
1. Characterization of Diverse Gate Oxides on 4H-SiC 3D Trench-MOS Structures
C.T. Banzhaf ; M. Grieb ; A. Trautmann ; A.J. Bauer ; L. Frey
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.691-694,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
2.

Conference Proceedings
Conference Proceedings
2. Influence of Post-Implantation Annealing Temperature on MOSFET Performance and Oxide Reliability
M. Grieb ; S. Noll ; D. Scholten ; M. Rambach
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.703-706,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
3.

Conference Proceedings
Conference Proceedings
3. Impact of Post-Trench Processing on the Electrical Characteristics of 4H-SiC Trench-MOS Structures with Thick Top and Bottom Oxides
C.T. Banzhaf ; M. Grieb ; M. Rambach ; A.J. Bauer ; L. Frey
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.753-756,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
4.

Conference Proceedings
Conference Proceedings
4. Trench-MOSFETs on 4H-SiC
C.T. Banzhaf ; S. Schwaiger ; D. Scholten ; S. Noll ; M. Grieb
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.848-851,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
5.

Conference Proceedings
Conference Proceedings
5. 4H-SiC N-MOSFET Logic Circuits for High Temperature Operation
M. Le-Huu ; M. Grieb ; F.F. Schrey ; H. Schmitt ; V. Häublein
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.734-737,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
6.

Conference Proceedings
Conference Proceedings
6. Electrical Characterization of MOS Structures with Deposited Oxides Annealed in N2O or NO
M. Grieb ; M. Noborio ; D. Peters ; A.J. Bauer ; P. Friedrichs
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.521-524,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
7.

Conference Proceedings
Conference Proceedings
7. Influence of Annealing, Oxidation and Doping on Conduction-Band near Interface Traps in 4H-SiC Characterized by Low Temperature Conductance Measurements
S. Noll ; M. Rambach ; M. Grieb ; D. Scholten ; A. Bauer
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.476-479,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
8.

Conference Proceedings
Conference Proceedings
8. Influence of the Oxidation Temperature and Atmosphere on the Reliability of Thick Gate Oxides on the 4H-SiC C(000-1) Face
M. Grieb ; D. Peters ; A.J. Bauer ; P. Friedrichs ; H. Ryssel
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.597-602,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
9.

Conference Proceedings
Conference Proceedings
9. Comparison of the Threshold-Voltage Stability of SiC MOSFETs with Thermally Grown and Deposited Gate Oxides
M. Grieb ; M. Noborio ; D. Peters ; A.J. Bauer ; P. Friedrichs
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.681-684,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
10.

Conference Proceedings
Conference Proceedings
10. Effect of Shallow n-Doping on Field Effect Mobility in p-Doped Channels of 4H-SiC MOS Field Effect Transistors
S. Noll ; M. Rambach ; M. Grieb ; D. Scholten ; A.J. Bauer
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.702-705,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780