1.

Conference Proceedings
Conference Proceedings
1. Proton and Electron Irradiation in Oxynitrided Gate 4H-SiC MOSFET: A Recent Open Issue
M. Florentin ; M. Alexandru ; A. Constant ; P. Michel ; J. Montserrat
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.667-672,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
2.

Conference Proceedings
Conference Proceedings
2. Study of Geometrical Effects in Charge Pumping Current for Lateral SiC nMOSFETs Electrical Characterization
M. Florentin ; J.M. Rafi ; F. Chevalier ; V. Soler ; L. Konczewicz
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.717-720,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
3.

Conference Proceedings
Conference Proceedings
3. High Temperature Electrical Characterization of 4H-SiC MESFET Basic Logic Gates
M. Alexandru ; V. Banu ; M. Florentin ; X. Jordá ; M. Vellvehi
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.1130-1134,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
4.

Conference Proceedings
Conference Proceedings
4. 10 MeV Proton Irradiation Effect on 4H-SiC nMOSFET Electrical Parameters
M. Florentin ; M. Alexandru ; A. Constant ; B. Schmidt ; P. Godignon
Pub. info.: HeteroSiC & WASMPE 2013 : Selected, peer reviewed papers from the 5th Edition of International Workshop on Silicon Carbide Hetero-Epitaxy and Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC-WASMPE 2013), June 17-19, 2013, Nice, France.  pp.121-126,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 806
5.

Conference Proceedings
Conference Proceedings
5. Irradiation and Post-Annealed nMOSFETs with Al Implanted P-Well: Limit of Robustness
M. Cabello ; M. Florentin ; M. Alexandru ; B. Schmidt ; J. Rebollo
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.655-658,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
6.

Conference Proceedings
Conference Proceedings
6. Low Energy Proton Radiation Impact on 4H-SiC nMOSFET Gate Oxide Stability
M. Florentin ; M. Alexandru ; A. Constant ; B. Schmidt ; J. Millán
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.525-528,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
7.

Conference Proceedings
Conference Proceedings
7. Rapid Thermal Oxidation of Si-Face N and P-Type On-Axis 4H-SiC
M. Florentin ; J. Montserrat ; P. Brosselard ; A. Henry ; P. Godignon
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.591-594,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780