Search records | 東京工業大学附属図書館文献データベース

You can search for articles included in proceedings of international conferences and technical papers which Tokyo Tech Library holds.
Tokyo Tech members can obtain tables of contents of 17,000 foreign journals by SwetScan. Tokyo Tech Library does not cover all of them.
List of Searchable Databases

Clear Form

Search for other sites by same keyword(s).

CiNii Books

NDL Search

WebcatPlus

amazon

カーリル

WorldCat

Filter

Title:

Author:

ISBN / ISSN / Paper No:

Source Title:

Publisher:

Publication Year:

～

Clear Form

Type:

Conference Proceedings

Technical Paper

Academic Journal

Select: Check all | Remove all

Sort order

10 | 50 | 100 / Per Page

23 results

Conference Proceedings

1. 4H-SiC Power BJTs with High Current Gain and Low On-Resistance

H.S. Lee ; M. Domeij ; C.M. Zetterling ; M. Ostling

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. pp.767-770, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

Conference Proceedings

2. A Comparative Study of Surface Passivation on SiC BJTs with High Current Gain

H.S. Lee ; M. Domeij ; C.M. Zetterling ; M. Ostling ; E.O. Sveinbjornsson

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. pp.631-634, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

Conference Proceedings

3. 1200 V, 3.3 mΩ SiC Bipolar Junction Transistor Power Modules

M. Domeij ; A. Konstantinov ; B. Buono ; M. Bast ; R. Eisele

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.970-973, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742

Conference Proceedings

4. 1200 V SiC BJTs with Low V_CESAT and High Temperature Capability

M. Domeij ; A. Lindgren ; C. Zaring ; A.O. Konstantinov ; K. Gumaelius

Pub. info.:	Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd. pp.686-689, 2011. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	679-680

Conference Proceedings

5. High Voltage, Low On-Resistance 4H-SiC BJTs with Improved Junction Termination Extension

R. Ghandi ; B. Buono ; M. Domeij ; C.M. Zetterling ; M. Östling

Pub. info.:	Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd. pp.706-709, 2011. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	679-680

Conference Proceedings

6. Current Gain Degradation in 4H-SiC Power BJTs

B. Buono ; R. Ghandi ; M. Domeij ; G. Malm ; C.M. Zetterling

Pub. info.:	Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd. pp.702-705, 2011. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	679-680

Conference Proceedings

7. A Simple and Reliable Electrical Method for Measuring the Junction Temperature and Thermal Resistance of 4H-SiC Power Bipolar Junction Transistors

K.G.P. Eriksson ; M. Domeij ; H.S. Lee ; C.M. Zetterling ; M. Östling

Pub. info.:	Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007. pp.1171-1174, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	600-603

Conference Proceedings

8. Assessment of High and Low Temperature Performance of SiC BJTs

M. Nawaz ; C. Zaring ; J. Bource ; M. Schupbach ; M. Domeij

Pub. info.:	Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain. pp.825-828, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	615-617

Conference Proceedings

9. Simulations of Open Emitter Breakdown Voltage in SiC BJTs with Non Implanted JTE

B. Buono ; H.S. Lee ; M. Domeij ; C.M. Zetterling ; M. Östling

Pub. info.:	Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain. pp.841-844, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	615-617

10.

Conference Proceedings

10. 1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-Resistance

H.S. Lee ; M. Domeij ; C.M. Zetterling ; R. Ghandi ; M. Östling

Pub. info.:	Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007. pp.1151-1154, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	600-603

23 results

Select: Check all | Remove all

Sort order

10 | 50 | 100 / Per Page

Filtering by:

Author: M. Domeij