1.

Conference Proceedings
Conference Proceedings
1. Drain Leakage Current Behavior in Circular Gate SOI nMOSFETs Operating from Room Temperature up to 573K
M. Bellodi ; L.M. Almeida
Pub. info.: Analytical and diagnostic techniques for semiconductor materials, devices and processes 7.  pp.71-84,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(3)
2.

Conference Proceedings
Conference Proceedings
2. Influence of the N-Type FinFET Width on the Zero Temperature Coefficient
M. Bellodi ; J. A. Martino ; L. M. Camiio ; E. Simoen ; C. Claeys
Pub. info.: Microelectronics Technology and Devices : SBMICRO 2007.  pp.29-36,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 9(1)
3.

Conference Proceedings
Conference Proceedings
3. Simple Analytical Model to Study the ZTC Bias Point in FinFETs
M. Bellodi ; L. Camillo ; J. A. Martino ; E. Simoen ; C. Claeys
Pub. info.: Silicon-on-insulator technology and devices 13.  pp.205-210,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(4)
4.

Conference Proceedings
Conference Proceedings
4. DMLM III Device Development for Enzymes Biochemical Reactions in Microgravity
A. La Neve ; M. Bellodi ; M.A.A. Melo ; M. Ferreira ; A.N. Pereira
Pub. info.: European Rocket and Balloon Programmes and Related Research : 20th ESA Symposium : 22-26 May 2011, Hyère, France.  pp.439-445,  2011.  Noordwijk.  ESA Communications
Title of ser.: ESA SP
Ser. no.: 700
5.

Conference Proceedings
Conference Proceedings
5. CADEN Device Development and Analysis of the Microgravity Effects on the Carbon Nanotubes films Properties
A. La Neve ; M. Bellodi ; M.A.A. Melo ; M. Ferreira ; R. Hauch
Pub. info.: European Rocket and Balloon Programmes and Related Research : 20th ESA Symposium : 22-26 May 2011, Hyère, France.  pp.523-528,  2011.  Noordwijk.  ESA Communications
Title of ser.: ESA SP
Ser. no.: 700
6.

Conference Proceedings
Conference Proceedings
6. Study of the Drain Leakage Current Behavior in Circular Gate SOI nMOSFET Using 0.13μm SOI CMOS Technology at High Temperatures
L. M. Almeida ; M. Bellodi
Pub. info.: Microelectronics Technology and Devices : SBMICRO 2007.  pp.397-404,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 9(1)