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21 results

Conference Proceedings

1. REDUCTION OF MISFIT DISLOCATION DENSITY IN FINITE LATERAL SIZE Si1-XGeX FILMS GROWN BY SELECTIVE EPITAXY

Vescan, L. ; Stoica, T. ; Dieker, C. ; Luth, H.

Pub. info.:	Silicon-based optoelectronic materials : Symposium held April 12-14, 1993, San Francisco, California, U.S.A.. pp.45-50, 1993. Pittsburgh, PA. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	298

Conference Proceedings

2. DEGRADATION OF POROUS Si LAYERS CAUSED BY THERMAL TREATMENT

Munder, H. ; Berger, M.G. ; Frohnhoff, S. ; Luth, H. ; Rossow, U. ; Frotscher, U. ; Richter, W.

Pub. info.:	Microcrystalline semiconductors : materials science & devices : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.. pp.281-286, 1993. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	283

Conference Proceedings

3. CHARACTERIZATION OF POROUS SILICON LAYERS BY REFLECTANCE SPECTROSCOPY

Theiβ, W. ; Grosse, P. ; Munder, H. ; Luth, H. ; Herino, R. ; Ligeon, M.

Pub. info.:	Microcrystalline semiconductors : materials science & devices : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.. pp.215-220, 1993. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	283

Conference Proceedings

4. QUASI-SCHOTTKY DIODES ON (n)In.53Ga.47As WITH BARRIER HEIGHTS OF 0.6 eV

Marso, M. ; Kordo-, P. ; Meyers, R. ; Luth, H.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.449-454, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

Conference Proceedings

5. ON THE OHMIC CONTACT FORMATION MECHANISM IN THE Au/Te/n-GaAS SYSTEM

Wuyts, K. ; Langouche, G. ; Vanderstraeten, H. ; Silverans, R. E. ; Van Hove, M. ; Van Rossum, M. ; Munder, H. ; Luth, H.

Pub. info.:	Advanced metallizations in microelectronics : symposium held April 16-20, 1990, San Francisco, California, U.S.A.. pp.345-350, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	181

Conference Proceedings

6. Microphotoluminescence Studies on Single GaN Nanocolumns

Sebald, K. ; Gutowski, J. ; Thillosen, N. ; Montanari, S. ; Meijers, R. ; Calarco, R. ; Kaluza, N. ; Hardtdegen, H. ; Luth, H.

Pub. info.:	GaN, AlN, InN and related materials : symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A.. pp.805-812, 2006. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	892

Conference Proceedings

7. PLASMA STIMULATED GROWTH OF InP FROM TEI AND PH3

Heinecke, H. ; Grafahrend, F. ; Brauers, A. ; Luth, H. ; Balk, P.

Pub. info.:	Photon, beam, and plasma stimulated chemical processes at surfaces : symposium held December 1-4, 1986, Boston, Massachusetts, U.S.A.. pp.747-754, 1987. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	75

Conference Proceedings

8. Characterization of a VPE gallium arsenide X-ｦﾃ ray detector

Bertuccio, G. ; Maiocchi, D. ; Rente, C. ; Forster, A. ; Luth, H.

Pub. info.:	EUV, x-ray, and gamma-ray instrumentation for astronomy IX : 22-24 July 1998 San Diego, California. pp.615-622, 1998. Bellingham, Wash.. SPIE
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3445

Conference Proceedings

9. EXTENDED QUANTUM MODEL FOR POROUS SILICON FORMATION

Munder, H. ; Frohnhoff, St. ; Berger, M. G. ; Marso, M. ; Thonissen, M. ; Arens-Fischer, R. ; Luth, H.

Pub. info.:	Microcrystalline and nanocrystalline semiconductors : Symposium held November 29-December 2, 1994, Boston, Massachusetts, U.S.A.. pp.315-, 1995. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	358

10.

Conference Proceedings

10. Morphological Transition of Ge Islands on Si(001) Grown by LPCVD

Goryll, M. ; Vescan, L. ; Luth, H.

Pub. info.:	Epitaxial growth - principles and applications : symposium held April 5-8, 1999, San Francisco, California, U.S.A.. pp.205-, 1999. Warrendale, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	570

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