200 mm Germanium-on-Insulator (GeOI) Structures Realized from Epitaxial Wafers using the Smart CutTM Technology | 東京工業大学附属図書館文献データベース

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200 mm Germanium-on-Insulator (GeOI) Structures Realized from Epitaxial Wafers using the Smart CutTM Technology

Author(s):

Publication title:

Semiconductor wafer bonding : science, technology, and applications : proceedings of the international symposia

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2005-02

Pub. Year:

2005

Page(from):

78

Page(to):

88

Pages:

11

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774604 [1566774608]

Language:

English

Call no.:

E23400/200502

Type:

Conference Proceedings

Details

TDL ID:	ZA00015387
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Semiconductor Wafer Bonding
Conf. info. (Number):	8th
Conf. info. (Venue):	Quebec City, Canada
Conf. info. (Date):	2005.05.15-2005.05.20

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