1.

Conference Proceedings
Conference Proceedings
1. Threshold voltage quantum simulations for ultra-thin silicon-on-insulator transistors
Lolivier, J. ; Deleonibus, S. ; Balestra, F.
Pub. info.: Silicon-on-insulator technology and devices XI : proceedings of the international symposium.  pp.379-382,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-5
2.

Conference Proceedings
Conference Proceedings
2. Advanced SOI MOSFETs: structures and device physics Invited
Faynot, O. ; Vandooren, A. ; Ritzenthaler, R. ; Poiroux, T. ; Lolivier, J. ; Jahan, C. ; Barraud, S. ; Ernst, T. ; Andrieu, F. ; Casse, M. ; Giffard B. ; Deleonibus, S.
Pub. info.: Silicon-on-insulator technology and devices XII : proceedings of the international symposium.  pp.1-10,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-03
3.

Conference Proceedings
Conference Proceedings
3. Planar Bonded Double Gate MOS Transistors Down to LG = 10 nm (Invited paper)
Vinet, M. ; Widiez, J. ; Lolivier, J. ; Poiroux, T. ; Biasse, B. ; Previtali, B. ; Dechamp, J. ; Deleonibus, S.
Pub. info.: ULSI Process Integration : proceedings of the International Symposium.  pp.285-295,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-06