1.

Conference Proceedings
Conference Proceedings
1. THE EFFECT OF INITIAL GROWTH CONDITIONS ON THE TILTING OF LATTICE PLANES IN IoP-ON-GaAs HETEROSTRUCTURES
Riesz, Ferenc ; Lischka,K. ; Rakennus, K. ; Hakkarainen, T. ; Pesek, A. ; Koppensteiner, E.
Pub. info.: Structure and properties of interfaces in materials : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.23-28,  1992.  Pittsburgh.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 238
2.

Conference Proceedings
Conference Proceedings
2. Micro-Raman and Electron Microscopy Analysis of Cubic GaN Layers on(001)GaAs
Tabata,A. ; Enderlein,R. ; Lima,A.P. ; Leite,J.R. ; Lemos,V. ; Kaiser,S. ; Schikora,D. ; Schottker,B. ; Kohler,U. ; Lischka,K.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1367-1370,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
3.

Conference Proceedings
Conference Proceedings
3. Cathodoluminescence of Cubic GaN Epilayers
Wang,C. ; As,D.J. ; Schikora,D. ; Schottker,B. ; Lischka,K.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1339-1342,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
4.

Conference Proceedings
Conference Proceedings
4. An Accurate Method to Determine the Growth Conditions during Molecular Beam Epitaxy of Cubic GaN
Schottker,B. ; Kuhler,J. ; As,D.J. ; Schikora,D. ; Lischka,K.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1173-1176,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
5.

Conference Proceedings
Conference Proceedings
5. Surface Reconstruction and MBE Growth of Cubic GaN on(001)GaAs:A Total Energy Study
Silva,J.L.F.da ; Enderlein,R. ; Scolfaro,L.M.R. ; Leite,J.R. ; Tabata,A. ; Lischka,K. ; Schikora,D. ; Bechstedt,F.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1197-1200,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
6.

Conference Proceedings
Conference Proceedings
6. Strain Characterization of Hg1-xFexSe-Layers by Electron Spin Resonance
Hendorfer,G. ; Jantsch,W. ; Helzel,W. ; Li,J.H. ; Wilamowski,Z. ; Widmer,T. ; Schikora,D. ; Lischka,K.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.561-566,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
7.

Conference Proceedings
Conference Proceedings
7. MBE Growth of High Mobility HgSe:Fe Layers
Widmer,Th. ; Schikora,D. ; Hendorfer,G. ; Luther,S. ; Jantsch,W. ; Lischka,K. ; Ortenberg,M.v.
Pub. info.: II-VI compounds and semimagnetic semiconductors : joint proceedings of the Third European Workshop on II-VI Compounds, Linz, Austria, 26-28 September 1994, and the Fourth International Workshop on Semimagnetic (Diluted Magnetic) Semiconductors, Linz, Austria, 26-28 September 1994.  pp.395-398,  1995.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 182-184
8.

Conference Proceedings
Conference Proceedings
8. Characterization of Semiconductor Surfaces and Interfaces by X-Ray Reflectivity Measurements
Plotz,W. ; Holy,V. ; Hoogenhof,W.V.D. ; Ahrer,W. ; Frank,N. ; Schiller,C. ; Lischka,K.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.1  pp.561-566,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
9.

Conference Proceedings
Conference Proceedings
9. Epitaxial growth and properties of cubic group-III nitride layers
Schikora,D. ; Schottger,B. ; As,D.J. ; Lischka,K.
Pub. info.: Physics and Simulation of Optoelectronic Devices V.  pp.60-81,  1997.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 2994