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8 results

1.

Conference Proceedings

1. N2O Processing Improves the 4H-SiC:SiO2 Interface

Lipkin, L.A. ; Das, M.K. ; Palmour, J.W.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.985-988, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

2.

Conference Proceedings

2. High-Current, NO-Annealed Lateral 4H-SiC MOSFETs

Das, M.K. ; Chung, G.Y. ; Williams, J.R. ; Saks, N.S. ; Lipkin, L.A. ; Palmour, J.W.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.981-984, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

3.

Conference Proceedings

3. N2O Processing Improves the 4H-SiC:SiO2 Interface

Lipkin, L.A. ; Das, M.K. ; Palmour, J.W.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.985-988, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

4.

Conference Proceedings

4. Large-Area (3.3 mm x 3.3 mm) Power MOSFETs in 4H-SiC

Ryu, S.-H. ; Agarwal, A. ; Richmond, J.T. ; Das, M.K. ; Lipkin, L.A. ; Palmour, J. ; Saks, N. ; Williams, J.R.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1195-1198, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

5.

Conference Proceedings

5. High-Current, NO-Annealed Lateral 4H-SiC MOSFETs

Das, M.K. ; Chung, G.Y. ; Williams, J.R. ; Saks, N.S. ; Lipkin, L.A. ; Palmour, J.W.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.981-984, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

6.

Conference Proceedings

6. Nitrogen Passivation of the Interface States Near the Conduction Band Edge in 4H-Silicon Carbide

Williams, J.R. ; Chung, G.Y. ; Tin, C.C. ; McDonald, K. ; Farmer, D. ; Chanana, R.K. ; Weller, R.A. ; Pantelides, S.T. ; Holland, O.W. ; Das, M.K. ; Lipkin, L.A. ; Feldman, L.C.

Pub. info.:	Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.. 2001. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	640

7.

Conference Proceedings

7. Anomalous Behavior of van der Pauw Sheet Resistance Measurements on 4H-SiC MOS Inversion Layers with Anisotropy Mobility

Saks, N.S. ; Ancona, M.G. ; Lipkin, L.A.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.689-692, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

8.

Conference Proceedings

8. Large-Area (3.3 mm x 3.3 mm) Power MOSFETs in 4H-SiC

Ryu, S.-H. ; Agarwal, A. ; Richmond, J.T. ; Das, Mrinal K. ; Lipkin, L.A. ; Palmour, J.W. ; Saks, N. ; Williams, J.R.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1195-1198, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

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