Introduction of Ions Into Wide Bandgap Semiconductors
- Author(s):
Maruska, H. Paul Lioubtchenko, Mike Tetreault, Thomas G. Osinski, Marek Pearton, Stephen J. Schurman, Matthew Vaudo, Robert Sakai, Shiro Chen, Qisheng Shul, Randy J. - Publication title:
- Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 483
- Pub. Year:
- 1998
- Page(from):
- 333
- Pub. info.:
- Warrendale, Penn.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558993884 [1558993886]
- Language:
- English
- Call no.:
- M23500/483
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Device Processing of Wide Bandgap Semiconductors - Challenges and Directions
Electrochemical Society |
Electrochemical Society |
2
Conference Proceedings
Ion Implantation in Wide Bandgap Semiconductors: Device Needs and Technological Challenges
Electrochemical Society |
8
Conference Proceedings
Application of high-power laser technology to wide-bandgap nitride semiconductor processing (Invited Paper)
SPIE-The International Society for Optical Engineering |
MRS - Materials Research Society |
Society of Photo-optical Instrumentation Engineers |
Materials Research Society |
Society of Photo-optical Instrumentation Engineers |
Materials Research Society |
Electrochemical Society |
Electrochemical Society |
12
Conference Proceedings
Measurement of carrier transport and dynamics in wide bandgap semiconductors using femtosecond pump-probe techniques
SPIE-The International Society for Optical Engineering |