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13 results

Conference Proceedings

1. *Pendeo-epitaxial growth and characterization of GaN and related materials on 6H-SiC(0001) and Si(111) substrates

Davis, R. F. ; Gehrke, T. ; Linthicum, K. J. ; Zheleva, T. S. ; Rajagopal, P. ; Zorman, C. A. ; Mehregany, M.

Pub. info.:	GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.. pp.W2.1.1-, 2000. Warrendale, Pa.. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	595

Conference Proceedings

2. Bound Exciton Energies, Biaxial Strains, and Defect Microstructures in GaN/AlN/6H-SiC(0001) Heterostructures

Perry, W. G. ; Zheleva, T. ; Linthicum, K. J. ; Bremser, M. D. ; Davis, R. F. ; Shan, W. ; Song, J. J.

Pub. info.:	III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.847-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	449

Conference Proceedings

3. Pendeo-Epitaxy of Gallium Nitride and Aluminum Nitride Films and Heterostructures on Silicon Carbide Substrate

Gehrke, T. ; Linthicum, K. J. ; Thomson, D. B. ; Rajagopal, P. ; Batchelor, A. D. ; Davis, R. F.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G3.2.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

Conference Proceedings

4. Process Routes for Low Defect-Density GaN on Various Substrates Employing Pendeo-Epitaxial Growth Techniques

Linthicum, K. J. ; Gehrke, T. ; Thomson, D. B. ; Tracy, K. M. ; Carlson, E. P. ; Smith, T. P. ; Zheleva, T. S. ; Zorman, C. A. ; Mehregany, M. ; Davis, R. F.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G4.9.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

Conference Proceedings

5. Characterization of Be-Implanted GaN Annealed at High Temperatures

Ronning, C. ; Linthicum, K. J. ; Carlson, E. P. ; Hartlieb, P. J. ; Thomson, D. B. ; Gehrke, T. ; Davis, R. F.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G3.17.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

Conference Proceedings

6. Ranges of Deposition Temperatures Applicable for Metalorganic Vapor Phase Epitaxy of GaN Films Via the Technique of Pendeo-Epitaxy

Thomson, D. B. ; Gehrke, T. ; Linthicum, K. J. ; Rajagopal, P. ; Davis, R. F.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G3.37.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

Conference Proceedings

7. Growth and Characterization of GaN and AlxGa1-xN Thin Films Achieved Via Lateral- and /or Pendeo-Epitaxial Overgrowth on 6H-SiC(0001) Substrates

Davis, R. F. ; Nam, O-H. ; Zheleva, T. S. ; Bremser, M. D. ; Linthicum, K. J. ; Gehrke, T. ; Rajagopal, P. ; Thomson, D. B. ; Carlson, E. P.

Pub. info.:	III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics : symposium held November 30-December 3, 1998, Boston, Massachusetts, U.S.A.. pp.91-, 1999. Warrendale, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	535

Conference Proceedings

8. Pendeo-Epitaxy-A New Approach for Lateral Growth of Gallium Nitride Structures

Zheleva, T. S. ; Smith, S. A. ; Thomson, D. B. ; Gehrke, T. ; Linthicum, K. J. ; Rajagopal, P. ; Carlson, E. ; Ashmawi, W. M. ; Davis, R. F.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G3.38.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

Conference Proceedings

9. 3C-SiC buffer layers converted from Si at a low temperature

Liaw, H. M. ; Hong, S. Q. ; Fejes, P. ; Werho, D. ; Tompkins, H. ; Zollner, S. ; Wilson, S. R. ; Linthicum, K. J. ; Davis, R. F.

Pub. info.:	Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.. pp.219-, 1999. Warrendale, PA. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	572

10.

Conference Proceedings

10. Lateral- and Pendeo-epitaxial Growth and Defect Reduction in GaN Thin Films

Davis, R. F. ; Nam, O. -H. ; Zheleva, T. S. ; Gehrke, T. ; Linthicum, K. J. ; Rajagopal, P.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.1471-1476, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

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