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15 results

Conference Proceedings

1. Formation of Ultra Shallow Donors in Silicon by Long-Term-Annealing at 470 °C

Aberg,D. ; Hallberg,T. ; Svensson,B.G. ; Lindstrom,J.L. ; Kleverman,M.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part1 pp.385-390, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

2. A new defect observed in annealed highly phosphorus doped electron-irradiated silicon

Lindstrom,J.L. ; Svensson,B.G. ; Chen,W.M.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.1 pp.333-338, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

Conference Proceedings

3. Bulk and Surface Properties of Cz Silicon After Hydrogen Plasma Treatments

Job,R. ; Ulyashin,A.G. ; Fahrner,W.R. ; Markevich,V.P. ; Murin,L.I. ; Lindstrom,J.L. ; Raiko,V. ; Engemann,J.

Pub. info.:	High Purity Silicon VI : proceedings of the sixth International Symposium. pp.209-220, 2000. Pennington, N.J., Bellingham, Wash.. Electrochemical Society — SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	4218

Conference Proceedings

4. SF6/O2 and CF4/O2 Reactive-Ion-Etching-Induced Defects in Silicon Studied by Photoluminescence Spectroscopy:Role of Oxygen

Buyanova,I.A. ; Henry,A. ; Monemar,B. ; Lindstrom,J.L. ; Sheinkman,M.K. ; Oehrlein,G.S.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.1807-1812, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

Conference Proceedings

5. A deep photoluminescence band in 4H SiC related to the silicon vacancy

Sorman,E. ; Son,N.T. ; Chen,W.M. ; Hallin,C. ; Lindstrom,J.L. ; Janzen,E.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part2 pp.685-690, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

6. Observation of Metastable Defect in Electron Irradiated 6H-SiC

Hemmingsson,C.G. ; Son,N.T. ; Kordina,O. ; Lindstrom,J.L. ; Janzen,E.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.561-564, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

7. Oxygen in Silicon

Corbett,J.W. ; Deak,P. ; Lindstrom,J.L. ; Roth,L.M. ; Snyder,L.C.

Pub. info.:	Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988. Part2 pp.579-588, 1989. Aederlmannsdorf, Switzwelns. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	38-41

Conference Proceedings

8. Tbe oxygen dimer in silicon:some experimental observatiol's

Hallberg,T. ; Lindstrom,J.L. ; Murin,L.I. ; Markevich,V.P.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part1 pp.361-366, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

9. Formation of Oxygen Dimers in Silicon during Electron-Irradiation Above 250 °C

Lindstrom,J.L. ; Hallberg,T. ; Aberg,D. ; Svensson,B.G. ; Murin,L.I. ; Markevich,V.P.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part1 pp.367-372, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

10.

Conference Proceedings

10. Annealing of Electron Irradiated P-,As-,Sb- and Bi-Doped Czochralski Silicon

Hallberg,T. ; Lindstrom,J.L. ; Svensson,B.G. ; Swiatek,K.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.2 pp.1239-1244, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

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