1.

Conference Proceedings
Conference Proceedings
1. Pressure Dependence of Schottky Barrier Height at Pt/GaAs Interface
Shan,W. ; Li,M.F. ; Yu,P.Y. ; Walukiewicz,W. ; Hansen,W.L.
Pub. info.: Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988.  Part3  pp.1427-1432,  1989.  Aederlmannsdorf, Switzwelns.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 38-41
2.

Conference Proceedings
Conference Proceedings
2. Reduction of Capture Barrier Height of Pressure-Induced Deep Donors(DX Center)in GaAs:Si
Li,M.F. ; Yu,P.Y. ; Shan,W. ; Hansen,W.L. ; Weber,E.R.
Pub. info.: Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988.  Part2  pp.851-856,  1989.  Aederlmannsdorf, Switzwelns.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 38-41
3.

Conference Proceedings
Conference Proceedings
3. Carrier Concentration Saturation in n Type AlxGa1-xAs
Du,A.Y. ; Li,M.F. ; Chong,T.C. ; Chua,S.J.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.279-283,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
4.

Conference Proceedings
Conference Proceedings
4. Pressure Dependence of the DX Center in Al0.35Ga0.65As:Te
Li,M.F. ; Shan,W. ; Yu,P.Y. ; Hansen,W.L. ; Weber,E.R. ; Bauser,E.
Pub. info.: Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988.  Part3  pp.1103-1108,  1989.  Aederlmannsdorf, Switzwelns.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 38-41
5.

Conference Proceedings
Conference Proceedings
5. Comparative investigation of high-resolution transmission electron microscopy and Fourier transform infrared spectroscopy for GaN films on sapphire substrate
Li,K. ; Hou,Y.T. ; Feng,Z.C. ; Chua,S.J. ; Li,M.F. ; Lau,E.W.P. ; Wee,A.T.S.
Pub. info.: Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures.  pp.84-91,  1999.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3899
6.

Conference Proceedings
Conference Proceedings
6. Piezoelectric Franz-Keldysh effect in a GaN/InGaN/AlGaN multilayer structure
Hou,Y.T. ; Teo,K.L. ; Li,M.F. ; Uchida,K. ; Tokunaga,H. ; Akutsu,N. ; Matsumoto,K.
Pub. info.: Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures.  pp.46-53,  1999.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3899
7.

Conference Proceedings
Conference Proceedings
7. Phonon-assisted photoluminescence in wurtzite GaN epilayer
Liu,W. ; Li,M.F. ; Xu,S.-J. ; Uchida,K. ; Matsumoto,K.
Pub. info.: Optoelectronic Materials and Devices.  pp.27-34,  1998.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3419
8.

Conference Proceedings
Conference Proceedings
8. Comparison of the optical gain of wurtzite GaN/AIGaN quantum well lasers grown on (0001)-and (1010)-oriented substrates
Chong,T.C. ; Yeo,Y.C. ; Li,M.F.
Pub. info.: Optoelectronic Materials and Devices.  pp.51-60,  1998.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3419