1.

Conference Proceedings
Conference Proceedings
1. Lithium induced vacancy formation and its effect on the diffusivity of lithium in gallium arsenide.(Invited)
Gislason,H.P. ; Leosson,K. ; Svavarsson,H. ; Saarinen,K. ; Mari,A.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part3  pp.1813-1820,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
2.

Conference Proceedings
Conference Proceedings
2. Low temperature intrinsic diffusion coefficient of lithium in GaAs
Leosson,K. ; Gislason,H.P.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part3  pp.1827-1832,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
3.

Conference Proceedings
Conference Proceedings
3. Reactivation Kinetics of Lithium-Passivated Acceptors in GaAs
Leosson,K. ; Yang,B.H. ; Gislason,H.P.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.1395-1400,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201