1.

Conference Proceedings
Conference Proceedings
1. PROPERTIES OF ULTRATHIN AMORPHOUS SILICON NITRIDE FILMS ON III-V SEMICONDUCTORS
Huang, L.J. ; Kwok, R.W.M. ; Lau, W.M. ; Tang, H.T. ; Lennard, W.N. ; Mitchell, I.V. ; Schultz, Peter J. ; Landheer, D.
Pub. info.: Amorphous insulating thin films : symposium held December 1-4, 1992, Boston, Massachusetts, U.S.A..  pp.595-600,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 284
2.

Conference Proceedings
Conference Proceedings
2. Comprehensive Optical and Compositional Characterization of Silicon-based Thin Films for Photonics
Wojcik, J. ; Irving, E.A. ; Davies, J.A. ; Lennard, W.N. ; Mascher, P.
Pub. info.: Silicon nitride and silicon dioxide thin insulating films VII : proceedings of the international symposium.  pp.381-395,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-2
3.

Conference Proceedings
Conference Proceedings
3. INVITED: NITROGEN ENGINEERING OF ULTRATHIN SILICON OXYNITRIDES
Green, M.L. ; Gusev, E.P. ; Lu, H. ; Garfunkel, E. ; Gustafsson, T. ; Lennard, W.N.
Pub. info.: Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology.  pp.745-759,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-1(1)
4.

Conference Proceedings
Conference Proceedings
4. Characterization of Gd2O3 Films Deposited on Si(l00) by E-Beam Evaporation from Pressed-Powder Targets
Landheer, D. ; Gupta, J. ; Hulse, J. ; Sproule, I. ; McCaffrey, J. ; Graham, M. ; Yang, K.-C. ; Lu, Z. ; Lennard, W.N.
Pub. info.: Low and high dielectric constant materials : materials science, processing, and reliability issues : proceedings of the fifth international symposium.  pp.193-204,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-5
5.

Conference Proceedings
Conference Proceedings
5. Properties of Gate-Quality Silicon Nitride and Oxynitride Dielectrics Deposited Using an Electron Cyclotron-Resonance Plasma Source
Landheer, D. ; Hulse, J.E. ; Quance, T. ; Aers, G.C. ; Sproule, G.I. ; Lennard, W.N. ; Simpson, P.J. ; Nlassoumi, G.R.
Pub. info.: Silicon nitride and silicon dioxide thin insulating films, proceedings of the fifth International Symposium.  pp.75-89,  1999.  Pennington, New Jersey.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-6
6.

Conference Proceedings
Conference Proceedings
6. REGROWTH OF DAMAGED LAYERS IN DIAMOND PRODUCED BY ION IMPLANTATION
Sandhu, G.S. ; Liu, B. ; Parikh, N.R. ; Hunn, J.D. ; Swanson, M.L. ; Wichert, Th. ; Deicher, M. ; Skudlik, H. ; Lennard, W.N. ; Mitchell, I.V.
Pub. info.: Diamond, silicon carbide, and related wide bandgap semiconductors : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.189-194,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 162
7.

Conference Proceedings
Conference Proceedings
7. Wavelength-Invariant Resist Composed of Bimetallic Layers
Tu, Y. ; Karimi, M. ; Morawej, N. ; Lennard, W.N. ; Simpson, T.W. ; Peng, J. ; Kavanagh, K.L. ; Chapman, G.H.
Pub. info.: Novel materials and processes for advances CMOS : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A..  pp.73-78,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 745