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Conference Proceedings

1. Characterization of Point Defects in Impurity-Doped GaAs by Slow Positrons

Wei,L. ; Lee,J.L. ; Tanigawa,S. ; Kawabe,M.

Pub. info.:	Positron annihilation : Proceedings of the 9th International Conference on Positron Annihilation, August 26-31, 1991, Szombathely, Hungary. Pt.3 pp.1487-1490, 1992. Aederlmannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	105-110

Conference Proceedings

2. The Study of Surface State of III-V Compound Semiconductors by Slow Positrons

Wei,L. ; Lee,J.L. ; Tanigawa,S. ; Oigawa,H. ; Nannichi,Y.

Pub. info.:	Positron annihilation : Proceedings of the 9th International Conference on Positron Annihilation, August 26-31, 1991, Szombathely, Hungary. Pt.3 pp.1495-1498, 1992. Aederlmannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	105-110

Conference Proceedings

3. The Effect of Point Defects on the Electrical Activation of Si-Implanted GaAs During Rapid Thermal Annealing Studied by Slow Positrons

Wei,L. ; Lee,J.L. ; Tanigawa,S. ; Nakagawa,T. ; Ohta,K.

Pub. info.:	Positron annihilation : Proceedings of the 9th International Conference on Positron Annihilation, August 26-31, 1991, Szombathely, Hungary. Pt.3 pp.1491-1494, 1992. Aederlmannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	105-110

Conference Proceedings

4. Influence of oxygen precipitates on the measurement of minority carrier diffusion length in p-type silicon material using surface photovoltage technique

Ma,Y. ; Lee,J.L. ; Benton,J.L. ; Boone,T. ; Eaglesham,D.J. ; Higashi,G.S.

Pub. info.:	In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing. pp.17-24, 1997. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3215

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