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13 results

Conference Proceedings

1. Electrical transport properties of highly doped N-type GaN epilayers

Lee,H.J. ; Cheong,M.G. ; Suh,E.-K. ; Razeghi,M.

Pub. info.:	Photodetectors : materials and devices III : 28-30 January 1998, San Jose, California. pp.321-326, 1998. Bellingham, Wash., USA. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3287

Conference Proceedings

2. Photocurrent decay transient process in a Si1-xGex/Si superlattice

Huang,X.L. ; Jeong,M.S. ; Cha,O.H. ; Kim,J.Y. ; Suh,E.-K. ; Lee,H.J.

Pub. info.:	Photodetectors : materials and devices III : 28-30 January 1998, San Jose, California. pp.313-320, 1998. Bellingham, Wash., USA. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3287

Conference Proceedings

3. Structured CAD methodology for integrated MEMS and IC design

Nguyen,L. ; Lee,H.J. ; Maher,M.A. ; Xu,Y.

Pub. info.:	Design, test, and microfabrication of MEMS and MOEMS : 30 March-1 April 1999, Paris, France. Part1 pp.259-265, 1999. Bellingham, Wash., USA. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3680

Conference Proceedings

4. Development of photoelastic experiment model material for Ti50Ni50 SMA-FRP

Hawong,J.S. ; Shimamoto,A. ; Lee,H.J. ; Furuya,Y.

Pub. info.:	Smart structures and materials 1997 : Mathematics and control in smart structures : 3-6 March 1997, San Diego, California. pp.559-570, 1997. Bellingham. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3039

Conference Proceedings

5. Characterization of Silica-Based Waveguide Layers for Integrated Optics Application,

Lee,H.J. ; Lee,Y.T. ; Youn,S.H. ; Sim,J.K. ; Choy,T.G.

Pub. info.:	Optics for science and new technology : 17th Congress of the International Commission for Optics, August 19-23, 1996, Hotel Riviera(Yusong), Taejon Korea. Part1 pp.185-186, 1996. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	2778

Conference Proceedings

6. Low Temperature Consolidation of Flame-Hydrolysis-Deposited Silica Layer for Integrated Optics Application,

Lee,Y.T. ; Chun,Y.Y. ; Lee,H.J.

Pub. info.:	Optics for science and new technology : 17th Congress of the International Commission for Optics, August 19-23, 1996, Hotel Riviera(Yusong), Taejon Korea. Part2 pp.971-972, 1996. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	2778

Conference Proceedings

7. Moving from analysis to design:a MEMS CAD tool evolution

Liateni,K. ; Lee,H.J. ; Maher,M.A. ; Karam,J.M.

Pub. info.:	Design, Test, Integration, and Packaging of MEMS/MOEMS : 9-11 May 2000, Paris, France. pp.188-192, 2000. Bellingham, Wash.. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	4019

Conference Proceedings

8. A Two-Band Analysis of Electrical Transport in n-Type GaN Epilayers

Cheong,M.G. ; Oh,K.S. ; Suh,E.-K. ; Lee,H.J.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part2 pp.1385-1388, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

9. The Mechanism of Void Formation in the Growth of 3C-SiC Thin Film in Si Substrate

Se,Y.H. ; Kim,K.C. ; Shim,H.W. ; Nahm,K.S. ; Suh,E.-K. ; Lee,H.J. ; Hwang,Y.C. ; Kim,D.-K. ; Lee,B.-T.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.199-202, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

10.

Conference Proceedings

10. Effects of Void Formation on Electrical and Optical Properties of 3C-SiC on Si(111)Substrates

Shim,H.W. ; Kim,K.C. ; Seo,Y.H. ; Nahm,K.S. ; Suh,E.-K. ; Lee,H.J. ; Hwang,Y.G.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.195-198, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

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