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Conference Proceedings

1. FORMATION OF BURIED α- AND β-FeSi2 IN (100) Si BY HIGH DOSE ION IMPLANTATION

Maex, K. ; Lauwers, A. ; Van Hove, M. ; Vandervorst, W. ; Van Rossum, M.

Pub. info.:	Beam-solid interactions : fundamentals and applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.. pp.869-874, 1993. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	279

Conference Proceedings

2. *SELF-ALIGNED SILICIDES FOR ULSI

Maex Karen ; Vandenabeele, P. ; Deweerdt, B. ; Coppye, W. ; Vermeiren, C. ; Lauwers, A. ; Maex, K.

Pub. info.:	Advanced metallization and processing for semiconductor devices and circuits--II : symposium held April 27-May 1, 1992, San Francisco, California, U.S.A.. pp.133-144, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	260

Conference Proceedings

3. L-Shape Spacer Architecture for Low Cost, High Performance CMOS

Augendre, E. ; Perello, C. ; Vandamme, E.P. ; Pochet, S. ; Rooyackers, R. ; Beckx, S. ; De Potter, M. ; Lauwers, A. ; Badenes, G.

Pub. info.:	ULSI Process Integration : proceedings of the International Symposium. pp.297-304, 2001. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2001-2

Conference Proceedings

4. Integration of Low and High Temperature Junction Anneals for 45 nm CMOS

Lindsay, R. ; Pawlak, B. ; Henson, K. ; Satta, A. ; Severi, S. ; Lauwers, A. ; Surdeanu, R. ; McCoy, S. ; Gelpey, J. ; Pages, X. ; Maex, K.

Pub. info.:	Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium. pp.145-156, 2004. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2004-01

Conference Proceedings

5. 22 Silicide scaling: Co, Ni or CoNi?

Lauwers, A. ; Kitti, IA. ; Akheyar, A. ; Van Dal, M ; Chamirian, O. ; de Potter, M ; Lindsay, R. ; Muex, K.

Pub. info.:	Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium. pp.167-182, 2003. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2003-14

Conference Proceedings

6. 26 Co-silicide, Co(Ni)-silicide and Ni-silicide to source¥drain contact resistance

Akheyar, A. ; Lauwers, A. ; Kitti, J.A. ; De Potter, M ; Chamirian, O. ; Jonckheere, R. ; Leunissen, P. ; van Dal, M ; Lindsay, R. ; Tempel, G. ; Maex, K.

Pub. info.:	Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium. pp.197-204, 2003. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2003-14

Conference Proceedings

7. 23 Ni-based silicides: material issues for advanced CMOS applications

Kittl, J.A. ; Lauwers, A. ; Chamirian, O. ; Van Dal, M ; Akheyar, A. ; Richard, O. ; Lisoni, J.G. ; De Potter, M ; Lindsay, R. ; Moex, K.

Pub. info.:	Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium. pp.177-182, 2003. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2003-14

Conference Proceedings

8. Analysis of Junctions Formed in Strained Si/SiGe Substrates

Eneman, G. ; Simoen, E. ; Lauwers, A. ; Lindsay, R. ; Verheyen, P. ; Delhougne, R. ; Loo, R. ; Caymax, M. ; Meunier-Beillard, P. ; Demuynck, S. ; Meyer, K.De ; Vandervorst, W.

Pub. info.:	High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A.. pp.187-192, 2004. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	809

Conference Proceedings

9. 28 Self-aligned PtSi Fully Silicided (FUST) Metal Gates for 45 nm CMOS Applications

van Dal, M.J.H. ; Lauwers, A. ; Cunniffe, J. ; Verbeeck, R. ; Vrancken, C. ; Demeurisse, C. ; Dao, T. ; Tamminga, Y. ; Veloso, A. ; Kittl, J.A. ; Maex, K.

Pub. info.:	Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium. pp.233-240, 2005. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2005-05

10.

Conference Proceedings

10. 27 Materials Issues of Ni Fully Silicided (FUSI) Gates for CMOS Applications

Kittl, J. A. ; Lauwers, A. ; Pawlak, M. A. ; Demeurisse, C. ; Anil, K. G. ; Veloso, A. ; van Dal, M. J. H. ; Schram, T. ; Brijs, B. ; Kaiser, M. ; Kubicek, S. ; Cunniffe, J. ; Verbeeck, R. ; Vrancken, C. ; Biesemans, S. ; Maex, K.

Pub. info.:	Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium. pp.225-232, 2005. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2005-05

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