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Conference Proceedings

1. Effect of the Nitridation of the Sapphire (0001) substrate on the GaN Growth

Grandjean, N. ; Massies, J. ; Vennegues, P. ; Laugt, M. ; Leroux, M.

Pub. info.:	III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.67-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	449

Conference Proceedings

2. Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by Molecular Beam Epitaxy

Grandjean, N. ; Massies, J. ; Leroux, M. ; Laugt, M. ; Lefebvre, P. ; Gil, B. ; Allegre, J. ; Bigenwald, P.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G11.7.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

Conference Proceedings

3. Molecular Beam Epitaxy of High Quality InGaN Alloys Using Ammonia: Optical and Structural Properties

Grandjean, N. ; Massies, J. ; Leroux, M. ; Laugt, M. ; Vennegues, P. ; Dalmasso, S. ; Ruterana, P. ; Hirsch, L. ; Barriere, S.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G3.59.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

Conference Proceedings

4. High Quality GaN on Si(111) Using (AIN/GaN)x Superlattice and Maskless ELO

Lahreche, H. ; Bousquet, V. ; Laugt, M. ; Tottereau, O. ; Vennegues, P. ; Beaumont, B. ; Gibart, P.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.1487-1490, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)