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Conference Proceedings

1. Improved Performance of MESFET Devices with L.T. GaAs Buffer Layers

Lagadas, M. ; Hatzopoulos, Z. ; Karadima, F. ; Konstantinidis, G. ; Kornilios, N. ; Papavasiliou, C. ; Christou, A.

Pub. info.:	Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A.. pp.789-, 1995. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	378

Conference Proceedings

2. PRESSURE RATIO (Pas/Pga) DEPENDENCE ON LOW TEMPERATURE GaAs BUFFER LAYERS GROWN BY MBE

Lagadas, M. ; Hatzopoulos, Z. ; Calamiotou, M. ; Kayiambaki, M. ; Christou, A.

Pub. info.:	Physics and applications of defects in advanced semiconductors : symposium held November 29-December 1, 1993, Boston, Massachusetts, U.S.A.. pp.383-, 1994. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	325

Conference Proceedings

3. Silicon Carbide Zener Diodes

Vassilevski, K. ; Zekentes, K. ; Bogdanova, E.V. ; Lagadas, M. ; Zorenko, A.V.

Pub. info.:	Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000. pp.735-738, 2001. Uetikon-Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	353-356

Conference Proceedings

4. Hydrogen-Induced Passivation of Deep Traps in n-GaAs:Si Grown on LT-GaAs

Paloura, E. C. ; Ginoudi, A. ; Theys, B. ; Chevallier, J. ; Lioutas, C. B. ; Kalomiros, J. ; Lagadas, M. ; Hatzopoulos, Z.

Pub. info.:	Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A.. pp.459-, 1995. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	378