1.

Conference Proceedings
Conference Proceedings
1. Accurate and efficient method for accelerated history effect simulations
Poiroux, T. ; Labourey, G. ; Flatresse, P. ; Faynot, O. ; Belleville, M. ; Souil, D. ; Giffard, B.
Pub. info.: Silicon-on-insulator technology and devices XI : proceedings of the international symposium.  pp.337-342,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-5
2.

Conference Proceedings
Conference Proceedings
2. Is SOI CMOS a promising technology for SOCs in high frequency range? Invited
Raynaud, C. ; Gianesello, F. ; Tinella, C. ; Flatresse, P. ; Gwoziecki, R. ; Touret, P. ; Avenier, G. ; Haendler, S. ; Gonnard, O. ; Gouget, G. ; Labourey, G. ; Pretet, J. ; Marin, M. ; Di Frenza, R. ; Axelrad, D. ; Delatte, P. ; Provins, G. ; Roux, J. ; Balossier, E. ; Vildeuil, J.C. ; Boret, S. ; Van Haaren, B. ; Chevalier, P. ; Boissonnet, L. ; Schwartzmann, T. ; Chantre, A. ; Gloria, D. ; De Foucauld, E. ; Scheer, P. ; Pavageau, C. ; Dambrine, G.
Pub. info.: Silicon-on-insulator technology and devices XII : proceedings of the international symposium.  pp.331-344,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-03