1.

Conference Proceedings
Conference Proceedings
1. 21 High resolution investigation of atomic interdiffusion during Co/Ni/Si phase transition
Alberti, A. ; Gqfra, B. ; Bongiorno, C. ; La Via, F. ; Spinella, C.
Pub. info.: Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium.  pp.161-166,  2003.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-14
2.

Conference Proceedings
Conference Proceedings
2. Epitaxial Layers Grown with HCl Addition: A Comparison with the Standard Process
La Via, F. ; Galvagno, G. ; Firrincieli, A. ; Roccaforte, F. ; Di Franco, S. ; Ruggiero, A. ; Barbera, M. ; Reitano, R. ; Musumeci, P. ; Calcagno, L. ; Foti, G. ; Mauceri, M. ; Leone, S. ; Pistone, G. ; Portuese, F.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.163-166,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor
Leone, S. ; Mauceri, M. ; Pistone, G. ; Abbondanza, G. ; Portuese, F. ; Abagnale, G. ; Valente, G.L. ; Crippa, D. ; Barbera, M. ; Reitano, R. ; Foti, G. ; La Via, F.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.179-182,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
4.

Conference Proceedings
Conference Proceedings
4. Optimisation of Epitaxial Layer Growth by Schottky Diodes Electrical Characterization
La Via, F. ; Galvagno, G. ; Firrincieli, A. ; Roccaforte, F. ; Di Franco, S. ; Ruggiero, A. ; Calcagno, L. ; Foti, G. ; Mauceri, M. ; Leone, S. ; Pistone, G. ; Abbondanza, G. ; Portuese, F. ; Abagnale, G. ; Valente, G.L.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.199-202,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
5.

Conference Proceedings
Conference Proceedings
5. Quantitative High-Resolution Two-Dimensional Profiling of SiC by Scanning Capacitance Microscopy
Raineri, V. ; Giannazzo, F. ; Calcagno, L. ; Musumeci, P. ; Roccaforte, F. ; La Via, F.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.655-658,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
6.

Conference Proceedings
Conference Proceedings
6. Electrical Characterization of Nickel Silicide Contacts on Silicon Carbide
Roccaforte, F. ; La Via, F. ; Raineri, V. ; Musumeci, P. ; Calcagno, L.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.893-896,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
7.

Conference Proceedings
Conference Proceedings
7. Electrical Characterization of Nickel Silicide Contacts on Silicon Carbide
Roccaforte, F. ; La Via, F. ; Raineri, V. ; Musumeci, P. ; Calcagno, L.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.893-896,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
8.

Conference Proceedings
Conference Proceedings
8. Comparison between Different Schottky Diode Edge Termination Structures: Simulations and Experimental Results
La Via, F. ; Roccaforte, F. ; Di Franco, S. ; Raineri, V. ; Moscatelli, F. ; Scorzoni, A. ; Cardinali, G.C.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.827-830,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
9.

Conference Proceedings
Conference Proceedings
9. Low Power Dissipation SiC Schottky Rectifiers with a Dual-Metal Planar Structure
Roccaforte, F. ; La Via, F. ; La Magna, A. ; Di Franco, S. ; Raineri, V.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.819-822,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
10.

Conference Proceedings
Conference Proceedings
10. Defects in He+ Irradiated 6H-SiC Probed by DLTS and LTPL Measurements
Ruggiero, A. ; Libertino, S. ; Mauceri, M. ; Reitano, R. ; Musumeci, P. ; Roccaforte, F. ; La Via, F. ; Calcagno, L.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.493-496,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460