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21 results

Conference Proceedings

1. A Large Reduction in Interface-State Density for MOS Capacitor on 4H-SiC (11-2 0) Face Using H2 and H2O Vapor Atmosphere Post-Oxidation Annealing

Fukuda, K. ; Senzaki, J. ; Kushibe, M. ; Kojima, K. ; Kosugi, R. ; Suzuki, S. ; Harada, S. ; Suzuki, T. ; Tanaka, T. ; Arai, K.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1057-1060, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

2. A Large Reduction in Interface-State Density for MOS Capacitor on 4H-SiC (11-2 0) Face Using H2 and H2O Vapor Atmosphere Post-Oxidation Annealing

Fukuda, K. ; Senzaki, J. ; Kushibe, M. ; Kojima, K. ; Kosugi, R. ; Suzuki, S. ; Harada, S. ; Suzuki, T. ; Tanaka, T. ; Arai, K.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1057-1060, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

3. Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs

Kojima, K. ; Ohno, T. ; Suzuki, S. ; Senzaki, J. ; Harada, S. ; Fukuda, K. ; Kushibe, M. ; Masahara, K. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1053-1056, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

4. Distribution Profile of Deep Levels in SiC Observed by Isothermal Capacitance Transient Spectroscopy

Fujimaki, M. ; Ono, Rudi ; Kushibe, M. ; Masahara, K. ; Kojima, K. ; Shinohe, T. ; Okushi, H. ; Arai, K.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.851-854, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

5. Observation of Deep Levels in SiC by Optical-Isothermal Capacitance Transient Spectroscopy

Kobayashi, S. ; Imai, S. ; Hayami, Y. ; Kushibe, M. ; Shinohe, T. ; Okushi, H.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.757-760, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

Conference Proceedings

6. Competitive Growth between Deposition and Etching in 4H-SiC CVD Epitaxy Using Quasi-Hot Wall Reactor

Kushibe, M. ; Ishida, Y. ; Okumura, H. ; Takahashi, T. ; Masahara, K. ; Ohno, T. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.169-172, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

Conference Proceedings

7. Pre-Growth Treatment of 4H-SiC Substrates by Hydrogen Etching at Low Pressure

Masahara, K. ; Ishida, Y. ; Okumura, H. ; Takahashi, T. ; Kushibe, M. ; Ohno, T. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.1037-1040, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

Conference Proceedings

8. Impact Ionization Coefficients of 4H-SiC

Hatakeyama, T. ; Watanabe, T. ; Kojima, K. ; Sano, N. ; Shiraishi, K. ; Kushibe, M. ; Imai, S. ; Shinohe, T. ; Suzuki, T. ; Tanaka, T. ; Arai, K.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.673-676, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

Conference Proceedings

9. Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition

Nishio, J. ; Kushibe, M. ; Masahara, K. ; Kojima, K. ; Ohno, T. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.215-218, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

10.

Conference Proceedings

10. High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor

Masahara, K. ; Takahashi, T. ; Kushibe, M. ; Ohno, T. ; Nishio, J. ; Kojima, K. ; Ishida, Y. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.179-182, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

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