1.

Conference Proceedings
Conference Proceedings
1. Optical and Magnetic Properties of Titanium Ions in CdTe and(Cd,Zn)Te
Peka,P. ; Lehr,M.U. ; Dziesiaty,J. ; Muller,S. ; Kreissl,J. ; Rudolph,P. ; Schulz,H.-J.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.1  pp.435-440,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
2.

Conference Proceedings
Conference Proceedings
2. Electron Paramagnetic Resonance and Optical Studies of Vanadium-Doped ZnTe
Kreissl,J. ; Irmscher,K. ; Peka,P. ; Lehr,M.U. ; Schulz,H.-J. ; Pohl,U.W.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.773-778,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
3.

Conference Proceedings
Conference Proceedings
3. Electron paramagnetic resonance identification of a trigonal Fe-S pair in GaP
Kreissl,J. ; Ulrici,W. ; Gehlhoff,W.
Pub. info.: Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991.  Pt.2  pp.719-722,  1992.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 83-87
4.

Conference Proceedings
Conference Proceedings
4. Lumineseeuce Yield of SrS:Ce,Na Powders
Huttl,B. ; Troppenz,U. ; Venghaus,H. ; Mauch,R.H. ; Kreissl,J. ; Gareia,A. ; Fouassier,C. ; Benalloul,P. ; Barthou,C. ; Benoit,J. ; Gendron,F. ; Ronda,C.
Pub. info.: II-VI compounds and semimagnetic semiconductors : joint proceedings of the Third European Workshop on II-VI Compounds, Linz, Austria, 26-28 September 1994, and the Fourth International Workshop on Semimagnetic (Diluted Magnetic) Semiconductors, Linz, Austria, 26-28 September 1994.  pp.263-266,  1995.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 182-184
5.

Conference Proceedings
Conference Proceedings
5. Optical Absorption and EPR of V4+ in GaP
Ulrici,W. ; Kreissl,J. ; Hayes,D.G. ; Eaves,L. ; Friedland,K.
Pub. info.: Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988.  Part2  pp.875-880,  1989.  Aederlmannsdorf, Switzwelns.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 38-41
6.

Conference Proceedings
Conference Proceedings
6. Photoluminescence,optical absorption,and EPR studies of the CO2+- Sp pair defect in GaP
Goser,R. ; Kreissl,J. ; Thonke,K. ; Ulrici,W.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.1069-1074,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
7.

Conference Proceedings
Conference Proceedings
7. Transition-metal acceptor pairs in silicon
Emanuelsson,P. ; Omling,P. ; Grimmeiss,H.G. ; Cehlhoff,W. ; Kreissl,J. ; Irmscher,K. ; Rehse,U.
Pub. info.: Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991.  Pt.1  pp.137-142,  1992.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 83-87
8.

Conference Proceedings
Conference Proceedings
8. The Titanium and Vanadium Donor in CdTe
Christmann,P. ; Kreissl,J. ; Hoffmann,D.M. ; Meyer,B.K. ; Schwarz,R. ; Benz,K.W.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.779-783,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
9.

Conference Proceedings
Conference Proceedings
9. Charge-transfer at Ti ions iu ZnTe
Selber,H.R. ; Peka,P. ; Schuiz,H.J. ; Pohl,U.W. ; Kreissl,J. ; Kaufmann,B. ; Dornen,A.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part3  pp.1401-1406,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263